Optical materials, optical components, devices, and methods

ABSTRACT

An optical material comprising quantum confined semiconductor nanoparticles having an improved solid state photoluminescent efficiency is disclosed. Also disclosed is an optical component including an optical material comprising quantum confined semiconductor nanoparticles having an improved solid state photoluminescent efficiency. Further disclosed are methods for treating an optical material comprising quantum confined semiconductor nanoparticles. Further disclosed are methods for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticles. One method comprises exposing the optical material to a light flux and heat for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value. Another method comprises exposing an optical component comprising quantum confined semiconductor nanoparticles to a light flux and heat for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value. Additional methods are disclosed, as are optical materials and optical components obtained by such methods. Devices including optical materials and/or optical components are also disclosed.

This application is a continuation of U.S. patent application Ser. No.13/283,399 filed 27 Oct. 2011, which is a continuation of commonly ownedInternational Application No. PCT/US2010/032799 filed 28 Apr. 2010,which was published in the English language as PCT Publication No. WO2010/129350 on 11 Nov. 2010, which International Application claimspriority to U.S. Application No. 61/173,375 filed 28 Apr. 2009, U.S.Application No. 61/175,430 filed 4 May 2009, U.S. Application No.61/175,456 filed 4 May 2009, U.S. Application No. 61/252,657 filed 17Oct. 2009, U.S. Application No. 61/252,749 filed 19 Oct. 2009, andInternational Application No. PCT/US2009/002789 filed 6 May 2009. Eachof the foregoing is hereby incorporated herein by reference in itsentirety.

TECHNICAL FIELD OF THE INVENTION

The present invention relates to the technical field of opticalmaterials including nanoparticles, devices and components includingoptical materials including nanoparticles, and methods.

SUMMARY OF THE INVENTION

The present invention also relates to an optical material comprisingquantum confined semiconductor nanoparticles. The present invention alsorelates to methods for treating an optical material comprising quantumconfined semiconductor nanoparticles. The present invention also relatesto devices and components including an optical material taught herein.The present invention also relates to devices and components includingan optical material treated by a method taught herein for treating anoptical material. The present invention also relates to methods forimproving the solid state photoluminescence efficiency or at least oneperformance stability property of an optical material. The presentinvention also relates to optical materials made by the methods taughtherein.

The present invention also relates to an optical component including anoptical material comprising quantum confined semiconductornanoparticles. The present invention also relates to methods fortreating an optical component including an optical material comprisingquantum confined semiconductor nanoparticles. The present invention alsorelates to devices and components including an optical component taughtherein. The present invention also relates to devices and componentsincluding an optical component treated by a method taught herein fortreating an optical component. The present invention also relates tomethods for improving the solid state photoluminescence efficiency or atleast one performance stability property of an optical component. Thepresent invention also relates to optical components made by the methodstaught herein.

In accordance with one aspect of the present invention there is providedan optical material comprising quantum confined semiconductornanoparticles, wherein the optical material has solid statephotoluminescent quantum efficiency greater than or equal to 60%.

For example, the optical material can have solid state photoluminescentquantum efficiency greater than or equal to 65%, greater than 70%,greater than 75%, greater than 80%, greater than 85%, greater than 90%,etc.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

In accordance with another aspect of the present invention, there isprovided an optical material comprising quantum confined semiconductornanoparticles distributed in a host material, wherein the opticalmaterial has solid state photoluminescent quantum efficiency greaterthan or equal to the solution quantum efficiency of the quantum confinedsemiconductor nanoparticles prior to addition of the nanoparticles tothe host material.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

In accordance with another aspect of the present invention, there isprovided an optical component including an optical material comprisingquantum confined semiconductor nanoparticles, wherein the opticalmaterial has solid state photoluminescent quantum efficiency greaterthan or equal to 60%.

For example, the optical material can have a solid statephotoluminescent quantum efficiency greater than or equal to 65%,greater than 70%, greater than 75%, greater than 80%, greater than 85%,greater than 90%, etc.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

In accordance with another aspect of the present invention, there isprovided an optical component including an optical material comprisingquantum confined semiconductor nanoparticles distributed in a hostmaterial, wherein the optical material has solid state photoluminescentquantum efficiency greater than or equal to the solution quantumefficiency of the quantum confined semiconductor nanoparticles prior toaddition of the nanoparticles to the host material.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The optical component can include an optical material comprising quantumconfined semiconductor nanoparticles distributed in a host material thatis at least partially encapsulated.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialincluded in an optical component can be protected by one or more barriermaterials.

The optical component can include an optical material comprising quantumconfined semiconductor nanoparticles distributed in a host material thatis fully encapsulated.

Preferably all of the surface area of the optical material included inan optical component is fully encapsulated.

In accordance with a further aspect of the present invention, there isprovided a method for treating an optical material comprising quantumconfined semiconductor nanoparticles. The method comprises exposing theoptical material to a light flux and heat for a period of timesufficient to increase the solid state photoluminescent quantumefficiency of the optical material by at least 10% of its pre-exposuresolid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical material to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical material by at least 20% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical material to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical material by at least 30% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical material to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical material by at least 40% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical material to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical material by at least 50% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can comprise exposing the optical material to light flux andheat for a period of time until the solid state photoluminescentefficiency increases to a substantially constant value.

The method can comprise exposing the optical material to light flux andheat at the same time.

The method can comprise exposing the optical material to heat during atleast a portion of the time the optical material is exposed to lightflux.

The method can comprise exposing the optical material to light flux andheat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can further include exposing optical material to light fluxand heat when the optical material is at least partially encapsulated.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialbeing treated can be protected by one or more barrier materials.

The method can further include exposing optical material to light fluxand heat when the optical material is fully encapsulated.

Preferably all of the surface area of the optical material being treatedis protected by one or more barrier materials.

The method can comprise exposing unencapsulated or partiallyencapsulated optical material to light flux and heat to achieve thedesired result and fully encapsulating optical material followingexposure to light flux and heat.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature greater than 20° C.

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature of at least 25° C.

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature in a range from about 25° to about 80° C.

The optical material can further comprise a host material in which thenanoparticles are distributed.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical material.

In a further aspect of the present invention, there is provided a methodfor treating an optical material comprising quantum confinedsemiconductor nanoparticles, the method comprising exposing the opticalmaterial to a light flux and heat for a period of time sufficient toachieve a solid state photoluminescent efficiency of the opticalmaterial greater than or equal to about 70%.

For example, the optical material can be exposed to light flux and heatfor a period of time sufficient to achieve a solid statephotoluminescent quantum efficiency greater than or equal to 65%,greater than 70%, greater than 75%, greater than 80%, greater than 85%,greater than 90%, etc.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can comprise exposing the optical material to light flux andheat for a period of time until the solid state photoluminescentefficiency increases to a substantially constant value.

The method can comprise exposing the optical material to light flux andheat at the same time.

The method can comprise exposing the optical material to heat during atleast a portion of the time the optical material is exposed to lightflux.

The method can comprise exposing the optical material to light flux andheat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can further include exposing optical material to light fluxand heat when the optical material is at least partially encapsulated.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialbeing treated can be protected by one or more barrier materials.

The method can further include exposing optical material to light fluxand heat when the optical material is fully encapsulated.

Preferably all of the surface area of the optical material being treatedis protected by one or more barrier materials.

The method can comprise exposing unencapsulated or partiallyencapsulated optical material to light flux and heat to achieve thedesired result and fully encapsulating optical material followingexposure to light flux and heat.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature greater than 20° C.

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature of at least 25° C.

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature in a range from about 25° to about 80° C.

The optical material can further comprise a host material in which thenanoparticles are distributed.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical material.

In accordance with yet another aspect of the present invention, there isprovided a method for treating an optical material comprising quantumconfined semiconductor nanoparticles, the method comprising exposing atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to increase the solid state photoluminescentquantum efficiency of the optical material by at least 10% of itspre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time sufficient toincrease solid state photoluminescent efficiency of the optical materialby at least 20% of its pre-exposure solid state photoluminescent quantumefficiency value.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time sufficient toincrease solid state photoluminescent efficiency of the optical materialby at least 30% of its pre-exposure solid state photoluminescent quantumefficiency value.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time sufficient toincrease solid state photoluminescent efficiency of the optical materialby at least 40% of its pre-exposure solid state photoluminescent quantumefficiency value.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time sufficient toincrease solid state photoluminescent efficiency of the optical materialby at least 50% of its pre-exposure solid state photoluminescent quantumefficiency value.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialbeing treated can be protected by one or more barrier materials.

The method can further include exposing optical material to light fluxwhen the optical material is fully encapsulated.

Preferably all of the surface area of the optical material being treatedis protected by one or more barrier materials.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time until the solidstate photoluminescent efficiency increases to a substantially constantvalue.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can further comprise exposing the at least partiallyencapsulated optical material to a light flux and heat at the same time.

The method can comprise exposing the at least partially encapsulatedoptical material to heat during at least a portion of the time theoptical material is exposed to light flux.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux to light flux and heat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can include exposing optical material to light flux when theoptical material is fully encapsulated.

The method can comprise exposing partially encapsulated optical materialto light flux to achieve the desired result and fully encapsulatingoptical material following exposure to light flux.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature greater than 20° C.

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature of at least 25° C.

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature in a range from about 25° to about 80° C.

The optical material can further comprise a host material in which thenanoparticles are distributed.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical material.

In accordance with yet another aspect of the present invention, there isprovided a method for treating an optical material comprising quantumconfined semiconductor nanoparticles, the method comprising exposing atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to achieve a solid state photoluminescentefficiency of the optical material greater than or equal to about 60%.

For example, the at least partially encapsulated optical material can beexposed to light flux for a period of time sufficient to achieve a solidstate photoluminescent quantum efficiency greater than or equal to 65%,greater than 70%, greater than 75%, greater than 80%, greater than 85%,greater than 90%, etc.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialbeing treated can be protected by one or more barrier materials.

The method can further include exposing optical material to light fluxwhen the optical material is fully encapsulated.

Preferably all of the surface area of the optical material being treatedis protected by one or more barrier materials.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time until the solidstate photoluminescent efficiency increases to a substantially constantvalue.

The method can further comprise exposing the at least partiallyencapsulated optical material to a light flux and heat at the same time.

The method can comprise exposing the at least partially encapsulatedoptical material to heat during at least a portion of the time theoptical material is exposed to light flux.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux to light flux and heat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can include exposing optical material to light flux when theoptical material is fully encapsulated.

The method can comprise exposing partially encapsulated optical materialto light flux to achieve the desired result and fully encapsulatingoptical material following exposure to light flux.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature greater than 20° C.

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature of at least 25° C.

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature in a range from about 25° to about 80° C.

The optical material can further comprise a host material in which thenanoparticles are distributed.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical material.

In accordance with a further aspect of the present invention, there isprovided a method for improving at least one of solid statephotoluminescent efficiency and a performance stability property of anoptical material comprising quantum confined semiconductornanoparticles, wherein the method comprises a method taught herein fortreating an optical material.

In accordance with yet another aspect of the present invention, there isprovided a method for treating an optical component including an opticalmaterial comprising quantum confined semiconductor nanoparticles, themethod comprising exposing the optical component to a light flux andheat for a period of time sufficient to increase the solid statephotoluminescent quantum efficiency of the optical material by at least10% of its pre-exposure solid state photoluminescent quantum efficiencyvalue.

The method can comprise exposing the optical component to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical component by at least 20% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical component by at least 30% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical component by at least 40% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical component by at least 50% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component to light flux andheat for a period of time until the solid state photoluminescentefficiency increases to a substantially constant value.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives. Themethod can comprise exposing the optical component to light flux andheat at the same time.

The method can comprise exposing the optical component to heat during atleast a portion of the time the optical material is exposed to lightflux.

The method can comprise exposing the optical component to light flux andheat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can further include exposing the optical component to lightflux and heat wherein the optical material included in the opticalcomponent is at least partially encapsulated.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialincluded in an optical component being treated can be protected by oneor more barrier materials.

The method can further include exposing an optical component to lightflux and heat when the optical material included in the opticalcomponent is fully encapsulated.

Preferably all of the surface area of the optical material included inan optical component being treated is protected by one or more barriermaterials.

The method can comprise exposing an optical component includingunencapsulated or partially encapsulated optical material to light fluxand heat to achieve the desired result and fully encapsulating opticalmaterial in the optical component following exposure to light flux andheat.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

Exposing the optical component to heat can comprise exposing the opticalcomponent to a temperature greater than 20° C.

Exposing the optical component to heat can comprise exposing the opticalcomponent to a temperature of at least 25° C.

Exposing the optical component to heat can comprise exposing the opticalcomponent to a temperature in a range from about 25° to about 80° C.

The optical component can include an optical material that can furthercomprise a host material in which the nanoparticles are distributed.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical component.

In yet another aspect of the present invention, there is provided amethod for treating an optical component including an optical materialcomprising quantum confined semiconductor nanoparticles. The methodcomprises exposing the optical component to a light flux and heat for aperiod of time sufficient to achieve a solid state photoluminescentefficiency of the optical material greater than or equal to about 60%.

For example, the optical component can be exposed to light flux and heatfor a period of time sufficient to achieve a solid statephotoluminescent quantum efficiency greater than or equal to 65%,greater than 70%, greater than 75%, greater than 80%, greater than 85%,greater than 90%, etc.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can comprise exposing the optical component to light flux andheat for a period of time until the solid state photoluminescentefficiency increases to a substantially constant value.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can comprise exposing the optical component to light flux andheat at the same time.

The method can comprise exposing the optical component to heat during atleast a portion of the time the optical material is exposed to lightflux.

The method can comprise exposing the optical component to light flux andheat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can further include exposing the optical component to lightflux and heat wherein the optical material included in the opticalcomponent is at least partially encapsulated.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialincluded in an optical component being treated can be protected by oneor more barrier materials.

The method can further include exposing an optical component to lightflux and heat when the optical material included in the opticalcomponent is fully encapsulated.

Preferably all of the surface area of the optical material included inan optical component being treated is protected by one or more barriermaterials.

The method can comprise exposing an optical component includingunencapsulated or partially encapsulated optical material to light fluxand heat to achieve the desired result and fully encapsulating opticalmaterial in the optical component following exposure to light flux andheat.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

Exposing the optical component to heat can comprise exposing the opticalcomponent to a temperature greater than 20° C.

Exposing the optical component to heat can comprise exposing the opticalcomponent to a temperature of at least 25° C.

Exposing the optical component to heat can comprise exposing the opticalcomponent to a temperature in a range from about 25° to about 80° C.

The optical component can include an optical material that can furthercomprise a host material in which the nanoparticles are distributed.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical component.

In accordance with a still further aspect of the present invention,there is provided a method for treating an optical component includingan optical material comprising quantum confined semiconductornanoparticles, the method comprising exposing an optical componentincluding at least partially encapsulated optical material to a lightflux for a period of time sufficient to increase the solid statephotoluminescent quantum efficiency of the optical material by at least10% of its pre-exposure solid state photoluminescent quantum efficiencyvalue.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to increase solid state photoluminescentefficiency of the optical material by at least 20% of its pre-exposuresolid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to increase solid state photoluminescentefficiency of the optical material by at least 30% of its pre-exposuresolid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to increase solid state photoluminescentefficiency of the optical material by at least 40% of its pre-exposuresolid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to increase solid state photoluminescentefficiency of the optical material by at least 50% of its pre-exposuresolid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time until the solid state photoluminescent efficiencyincreases to a substantially constant value.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialincluded in an optical component being treated can be protected by oneor more barrier materials.

The method can further include exposing an optical component to lightflux when the optical material is fully encapsulated.

Preferably all of the surface area of the optical material included inan optical component being treated is protected by one or more barriermaterials.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time until the solid state photoluminescent efficiencyincreases to a substantially constant value.

The method can further comprise exposing the optical component includingat least partially encapsulated optical material to a light flux andheat at the same time.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to heat during at least aportion of the time the optical material is exposed to light flux.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux to lightflux and heat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can include exposing optical component including opticalmaterial to light flux when the optical material is fully encapsulated.

The method can comprise exposing optical component including partiallyencapsulated optical material to light flux to achieve the desiredresult and fully encapsulating optical material following exposure tolight flux.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature greater than 20° C.

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature of at least 25° C.

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature in a range from about 25° to about 80° C.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical component.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical component.

In accordance with a further aspect of the present invention, there isprovided a method for treating an optical component including an opticalmaterial comprising quantum confined semiconductor nanoparticles, themethod comprising exposing the optical component including at leastpartially encapsulated optical material to a light flux for a period oftime sufficient to achieve a solid state photoluminescent efficiency ofthe optical material greater than or equal to about 60%.

For example, the optical component including at least partiallyencapsulated optical material can be exposed to light flux for a periodof time sufficient to achieve a solid state photoluminescent quantumefficiency greater than or equal to 65%, greater than 70%, greater than75%, greater than 80%, greater than 85%, greater than 90%, etc.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time until the solid state photoluminescent efficiencyincreases to a substantially constant value.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialincluded in an optical component being treated can be protected by oneor more barrier materials.

The method can further include exposing an optical component to lightflux when the optical material is fully encapsulated.

Preferably all of the surface area of the optical material included inan optical component being treated is protected by one or more barriermaterials.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time until the solid state photoluminescent efficiencyincreases to a substantially constant value.

The method can further comprise exposing the optical component includingat least partially encapsulated optical material to a light flux andheat at the same time.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to heat during at least aportion of the time the optical material is exposed to light flux.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux to lightflux and heat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can include exposing optical component including opticalmaterial to light flux when the optical material is fully encapsulated.

The method can comprise exposing optical component including partiallyencapsulated optical material to light flux to achieve the desiredresult and fully encapsulating optical material following exposure tolight flux.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature greater than 20° C.

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature of at least 25° C.

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature in a range from about 25° to about 80° C.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical component.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical component.

In accordance with a further aspect of the present invention, there isprovided a method for improving at least one of solid statephotoluminescent efficiency and a performance stability property of anoptical component including an optical material comprising quantumconfined semiconductor nanoparticles, wherein the method comprises amethod taught herein for treating an optical component.

In accordance with another aspect of the present invention, there isprovided a device including an optical material taught herein.

In accordance with another aspect of the present invention, there isprovided a device including an optical component taught herein.

In accordance with another aspect of the present invention, there isprovided a method for improving the solid state photoluminescentefficiency of an optical material comprising quantum confinedsemiconductor nanocrystals wherein the optical material has beenpreviously handled in an atmosphere that includes oxygen (e.g., but notlimited to, air). The method comprises exposing the previously handledoptical material comprising quantum confined semiconductor nanocrystalsto light flux for a period of time sufficient to increase the solidstate photoluminescent efficiency thereof, wherein the optical materialis partially encapsulated during the exposure step.

The method can be carried out in an atmosphere that includes oxygen.

The method can be carried out in an inert atmosphere.

The method can be carried out in a nitrogen atmosphere.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise a peak wavelength in a range from about 365nm to about 470 nm.

The light flux can comprise a peak wavelength that is less than thebandgap of the nanoparticles.

The light flux can be in a range from about 10 to about 100 mW/cm².

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialbeing treated can be protected by one or more barrier materials.

The method can further include exposing optical material to light fluxwhen the optical material is fully encapsulated.

Preferably all of the surface area of the optical material being treatedis protected by one or more barrier materials.

The method can further include exposing the optical material to heat atleast a portion of the time the optical component is exposed to lightflux.

The method can further include exposing the optical material to heatduring the total time the optical component is exposed to light flux.

Exposing the optical material to heat can comprise heating the opticalmaterial at a temperature greater than 20° C.

An optical material can comprise quantum confined semiconductornanoparticles that include a core comprising a first semiconductormaterial and a shell on at least a portion of the outer surface of thecore, the shell comprising one or more layers, wherein each layer maycomprise a semiconductor material that is the same or different fromthat included in each of any other layer.

The method can further include fully encapsulating a partiallyencapsulated optical material following exposure to light flux and heat.Such encapsulation step can be carried out in an oxygen freeenvironment.

Preferably, the optical material is fully encapsulated while beingexposed to light flux.

The optical material can be at least partially or fully encapsulated byone or more barrier materials.

A barrier material can comprise a material that is a barrier to oxygen.

A barrier material can comprise a material that is a barrier to oxygenand water.

An optical material can be included in an optical component or otherdevice when exposed to light flux.

An optical material can be treated while included in an opticalcomponent.

In accordance with another aspect of the invention, there is provided anoptical material and an optical component treated by a method taughtherein.

As used herein, “encapsulation” refers to protection against oxygen. Incertain embodiments, encapsulation can be complete (also referred toherein as full encapsulation or fully encapsulated). In certainembodiments, encapsulation can be less than complete (also referred toherein as partial encapsulation or partially encapsulated).

As used herein, “barrier material” refers to a material that providesprotection against at least oxygen.

As used herein, “solid state external quantum efficiency that does notchange by more than X %” (wherein X=5, 10, 20, 30, 40) is determinedfrom measurements made on an item at the beginning of a 60 day periodand after it has been stored in air for the following 60 days at 20° C.under fluorescent room light. In other words, the value of the solidstate external quantum efficiency does not change by more than X % ofthe value of the solid state external quantum efficiency measured at thebeginning of the 60 day period. As used in the foregoing definition,“fluorescent room light” refers to general illumination light of about5000 lumens that is provided by one or more fluorescent lamps.

As used herein, “solid state external quantum efficiency” (also referredto herein as “EQE” or “solid state photoluminescent efficiency) ismeasured in a 12” integrating sphere using a NIST traceable calibratedlight source, using the method developed by Mello et al., AdvancedMaterials 9(3):230 (1997), which is hereby incorporated by reference.

The foregoing, and other aspects and embodiments described herein allconstitute embodiments of the present invention.

It should be appreciated by those persons having ordinary skill in theart(s) to which the present invention relates that any of the featuresdescribed herein in respect of any particular aspect and/or embodimentof the present invention can be combined with one or more of any of theother features of any other aspects and/or embodiments of the presentinvention described herein, with modifications as appropriate to ensurecompatibility of the combinations. Such combinations are considered tobe part of the present invention contemplated by this disclosure.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory onlyand are not restrictive of the invention as claimed. Other embodimentswill be apparent to those skilled in the art from consideration of thespecification and practice of the invention disclosed herein.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings,

FIG. 1 depicts a schematic of a non-limiting example of an arrangementthat can be used with methods described herein.

FIG. 2 depicts spectra to illustrate a method for measuring quantumefficiency.

The attached figures are simplified representations presented forpurposes of illustration only; the actual structures may differ innumerous respects, particularly including the relative scale of thearticles depicted and aspects thereof.

For a better understanding to the present invention, together with otheradvantages and capabilities thereof, reference is made to the followingdisclosure and appended claims in connection with the above-describeddrawings.

DETAILED DESCRIPTION OF THE INVENTION

Various aspects and embodiments of the present inventions will befurther described in the following detailed description.

In accordance with one aspect of the present invention there is providedan optical material comprising quantum confined semiconductornanoparticles, wherein the optical material has solid statephotoluminescent quantum efficiency greater than or equal to 60%.

For example, the optical material can have a solid statephotoluminescent quantum efficiency greater than or equal to 65%,greater than 70%, greater than 75%, greater than 80%, greater than 85%,greater than 90%, etc.

An optical material can include at least one type of quantum confinedsemiconductor nanoparticle with respect to chemical composition,structure, and size. The type(s) of quantum confined semiconductornanoparticles included in an optical material can be determined by thewavelength of light to be converted and the wavelengths of the desiredlight output. As discussed herein, quantum confined semiconductornanoparticles may or may not include a shell and/or a ligand on asurface thereof. A shell and/or ligand can passivate quantum confinedsemiconductor nanoparticles to prevent agglomeration or aggregation toovercome the Van der Waals binding force between the nanoparticles. Asdiscussed herein, a shell can comprise an inorganic shell.

Two or more different type of quantum confined semiconductornanoparticles (based on composition, structure and/or size) may beincluded in an optical material, wherein each type is selected to obtainlight having a predetermined color.

An optical material can include one or more different types of quantumconfined semiconductor nanoparticles that include a core comprising afirst semiconductor material and a shell on at least a portion of theouter surface of the core, the shell comprising one or more layers,wherein each layer may comprise a semiconductor material that is thesame or different from that included in each of any other layer.

An optical material can comprise quantum confined semiconductornanoparticles distributed in a host material.

Examples of host materials include polymers, resins, silicones, andglass. Other examples of host materials are provided below.

An optical material including a host material can include up to about 30weight percent quantum confined semiconductor nanoparticles based on theweight of the host material.

An optical material can further comprise light scatterers. Additionalinformation concerning light scatterers is provided below.

An optical material including light scatterers can include an amount oflight scatterers in a range from 0.01 weight percent based on the weightof the host material up to an amount that is the same as the amount ofquantum confined semiconductor nanoparticles included in the opticalmaterial. Other amounts of light scatterers can be included.

An optical material can further comprise other optional additives.

Examples of other optional additives can include, but are not limitedto, e.g., wetting or leveling agents).

An optical material in accordance with the invention can have a solidstate photoluminescent efficiency that does not change by more than 40%upon exposure to air for 60 days at 20° C. under fluorescent room light.

An optical material in accordance with the invention can have a solidstate photoluminescent efficiency of the material that does not changeby more than 30% upon exposure to air for 60 days at 20° C. underfluorescent room light.

An optical material in accordance with the invention can have a solidstate photoluminescent efficiency of the material that does not changeby more than 20% upon exposure to air for 60 days at 20° C. underfluorescent room light.

An optical material in accordance with the invention can have a solidstate photoluminescent efficiency of the material that does not changeby more than 10% upon exposure to air for 60 days at 20° C. underfluorescent room light.

An optical material in accordance with the invention can have a solidstate photoluminescent efficiency of the material that does not changeby more than 5% upon exposure to air for 60 days at 20° C. underfluorescent room light.

In accordance with another aspect of the present inventions, there isprovided an optical material comprising quantum confined semiconductornanoparticles distributed in a host material, wherein the opticalmaterial has solid state photoluminescent quantum efficiency greaterthan or equal to the solution quantum efficiency of the quantum confinedsemiconductor nanoparticles prior to addition of the nanoparticles tothe host material.

An optical material can include at least one type of quantum confinedsemiconductor nanoparticle with respect to chemical composition,structure, and size. The type(s) of quantum confined semiconductornanoparticles included in an optical material can be determined by thewavelength of light to be converted and the wavelengths of the desiredlight output. As discussed herein, quantum confined semiconductornanoparticles may or may not include a shell and/or a ligand on asurface thereof. A shell and/or ligand can passivate quantum confinedsemiconductor nanoparticles to prevent agglomeration or aggregation toovercome the Van der Waals binding force between the nanoparticles. Asdiscussed herein, a shell can comprise an inorganic shell.

Two or more different type of quantum confined semiconductornanoparticles (based on composition, structure and/or size) may beincluded in an optical material, wherein each type is selected to obtainlight having a predetermined color.

An optical material can include one or more different types of quantumconfined semiconductor nanoparticles that include a core comprising afirst semiconductor material and a shell on at least a portion of theouter surface of the core, the shell comprising one or more layers,wherein each layer may comprise a semiconductor material that is thesame or different from that included in each of any other layer.

An optical material can comprise quantum confined semiconductornanoparticles distributed in a host material.

Examples of host materials include polymers, resins, silicones, andglass. Other examples of host materials are provided below.

An optical material including a host material can include up to about 30weight percent quantum confined semiconductor nanoparticles based on theweight of the host material.

An optical material can further comprise light scatterers. Additionalinformation concerning light scatterers is provided below.

An optical material including light scatterers can include an amount oflight scatterers in a range from 0.01 weight percent based on the weightof the host material up to an amount that is the same as the amount ofquantum confined semiconductor nanoparticles included in the opticalmaterial. Other amounts of light scatterers can be included.

An optical material can further comprise other optional additives.

Examples of other optional additives can include, but are not limitedto, e.g., wetting or leveling agents).

An optical material in accordance with the invention can have a solidstate photoluminescent efficiency that does not change by more than 40%upon exposure to air for 60 days at 20° C. under fluorescent room light.

An optical material in accordance with the invention can have a solidstate photoluminescent efficiency of the material that does not changeby more than 30% upon exposure to air for 60 days at 20° C. underfluorescent room light.

An optical material in accordance with the invention can have a solidstate photoluminescent efficiency of the material that does not changeby more than 20% upon exposure to air for 60 days at 20° C. underfluorescent room light.

An optical material in accordance with the invention can have a solidstate photoluminescent efficiency of the material that does not changeby more than 10% upon exposure to air for 60 days at 20° C. underfluorescent room light.

An optical material in accordance with the invention can have a solidstate photoluminescent efficiency of the material that does not changeby more than 5% upon exposure to air for 60 days at 20° C. underfluorescent room light.

In accordance with another aspect of the present invention, there isprovided an optical component including an optical material comprisingquantum confined semiconductor nanoparticles, wherein the opticalmaterial has solid state photoluminescent quantum efficiency greaterthan or equal to 60%.

For example, the optical material can have solid state photoluminescentquantum efficiency greater than or equal to 65%, greater than 70%,greater than 75%, greater than 80%, greater than 85%, greater than 90%,etc.

An optical material included in the optical component can include atleast one type of quantum confined semiconductor nanoparticle withrespect to chemical composition, structure, and size. The type(s) ofquantum confined semiconductor nanoparticles included in an opticalmaterial can be determined by the wavelength of light to be convertedand the wavelengths of the desired light output. As discussed herein,quantum confined semiconductor nanoparticles may or may not include ashell and/or a ligand on a surface thereof. A shell and/or ligand canpassivate quantum confined semiconductor nanoparticles to preventagglomeration or aggregation to overcome the Van der Waals binding forcebetween the nanoparticles. As discussed herein, a shell can comprise aninorganic shell.

Two or more different type of quantum confined semiconductornanoparticles (based on composition, structure and/or size) may beincluded in an optical material included in an optical component,wherein each type is selected to obtain light having a predeterminedcolor.

An optical material can include one or more different types of quantumconfined semiconductor nanoparticles that include a core comprising afirst semiconductor material and a shell on at least a portion of theouter surface of the core, the shell comprising one or more layers,wherein each layer may comprise a semiconductor material that is thesame or different from that included in each of any other layer.

An optical material can comprise quantum confined semiconductornanoparticles dispersed or distributed in a host material.

Examples of host materials include polymers, resins, silicones, andglass. Other examples of host materials are provided below.

An optical material including a host material can include up to about 30weight percent quantum confined semiconductor nanoparticles based on theweight of the host material

An optical material can further comprise light scatterers. Additionalinformation concerning light scatterers is provided below.

The amount of light scatterers can be determined based on the particularoptical component and its intended end-use application. An opticalmaterial including light scatterers can include, for example, an amountof light scatterers in a range from 0.01 weight percent based on theweight of the host material up to an amount that is the same as theamount of quantum confined semiconductor nanoparticles included in theoptical material. Other amounts of light scatterers can be included.

An optical material can further comprise other optional additives.

Examples of other optional additives can include, but are not limitedto, e.g., wetting or leveling agents).

An optical component in accordance with the invention can include anoptical material having a solid state photoluminescent efficiency thatdoes not change by more than 40% upon exposure to air for 60 days at 20°C. under fluorescent room light.

An optical component in accordance with the invention can include anoptical material having a solid state photoluminescent efficiency thatdoes not change by more than 30% upon exposure to air for 60 days at 20°C. under fluorescent room light.

An optical component in accordance with the invention can include anoptical material having a solid state photoluminescent efficiency thatdoes not change by more than 20% upon exposure to air for 60 days at 20°C. under fluorescent room light.

An optical component in accordance with the invention can include anoptical material having a solid state photoluminescent efficiency thatdoes not change by more than 10% upon exposure to air for 60 days at 20°C. under fluorescent room light.

An optical component in accordance with the invention can include anoptical material having a solid state photoluminescent efficiency thatdoes not change by more than 5% upon exposure to air for 60 days at 20°C. under fluorescent room light.

An optical component in accordance with the invention can furtherinclude a structural member that supports or contains the opticalmaterial. Such structural member can have a variety of different shapesor configurations. For example, it can be planar, curved, convex,concave, hollow, linear, circular, square, rectangular, oval, spherical,cylindrical, or any other shape or configuration that is appropriatebased on the intended end-use application and design. An example of acommon structural components is a substrates such as a plate-likemember.

An optical material can be disposed on a surface of a structural member.

An optical material can be disposed within a structural member.

For example, an optical material can be included in a cavity or hollowportion that may be included in a structural member, e.g., but notlimited to, a tube-like structural member, which can have any shapecross-section.

The configuration and dimensions of an optical component can be selectedbased on the intended end-use application and design.

An optical component can include an optical material that is at leastpartially encapsulated.

An optical component can include an optical material that is at leastpartially encapsulated by one or more barrier materials.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialincluded in the optical component can be protected by one or morebarrier materials.

A barrier material may be in the form of a structural member designedand configured based on the intended end-use application for the opticalcomponent including same.

For example, an optical component can comprise an optical material thatis at least partially encapsulated between opposing structural members,wherein each of the structural members comprises one or more barriermaterials, which can be the same or different.

For example, an optical component can comprise an optical material thatis at least partially encapsulated between a structural member and acoating or layer, wherein each of the structural member and coating orlayer comprise one or more barrier materials, which can be the same ordifferent.

A barrier material can be substantially oxygen impervious.

A barrier material can be substantially water impervious.

A barrier material can be substantially oxygen and water impervious.

A barrier material can also be a structural member.

In another example, an optical component can comprise an opticalmaterial included within a structural member. For example, an opticalmaterial can be included in a hollow or cavity portion of a tubular-likestructural member (e.g., a tube, hollow capillary, hollow fiber, etc.)that can be open at either or both ends.

Other designs, configurations, and combinations of barrier materialsand/or structural members comprising barrier materials can be includedin an optical component in which the optical material is at leastpartially encapsulated. Such designs, configurations, and combinationscan be selected based on the intended end-use application and design.

Barrier material included in an optical component can be opticallytransparent to permit light to pass into and/or out of optical materialthat it may encapsulate.

Depending on the design of an optical component, a barrier materialand/or a structural member that is optically transparent may be includedin a preselected region of the optical component to permit light to passinto and/or out of such region. Such preselected region can be apredetermined area of the of the optical component or the entirecomponent, based on the design and intended end-use application.

Examples of transparent materials that can serve as barrier materialsand/or structural members, include, but are not limited to, e.g., glass,polycarbonate, hardcoated polyester, acrylic, other known materials thatare impervious to preselected environmental factors, (e.g., oxygenand/or moisture).

A barrier material and/or structural member can be flexible (e.g. butnot limited to thin acrylic, epoxy, polycarbonate, PEN, PET, PE).

A barrier material can be a composite, consisting of multiple layers ofdifferent components, or coatings on a substrate.

A barrier material and/or structural member can be rigid (e.g. but notlimited to glass, thick acrylic, thick transparent polymers, may be acomposite or coated with layers (e.g. SiO_(x)) to improve barrierproperties)

A barrier material and/or a structural member can have surface that issmooth or roughened.

A barrier material and/or a structural member can have a thickness thatis substantially uniform.

As mentioned above, an optical component can include an optical materialthat is fully encapsulated.

For example, an optical component can include an optical material thatis fully encapsulated by a barrier material or structural member or by acombination of two or more barrier materials and/or structural members.

Preferably all of the surface area of the optical material included inan optical component is protected by one or more barrier materials.

An optical component including an optical material that is fullyencapsulated by one or more barrier materials and/or structural member scan further include a seal to join such materials and/or structuralmembers together. A seal can comprise a material that also blocks thepassage of oxygen and moisture.

For example, an optical component can include an optical material thatis encapsulated between opposing barrier materials that are sealedtogether by another barrier material or sealant. An example of thisarrangement includes an optical material that is fully encapsulatedbetween opposing substrates (e.g., glass plates) that are sealedtogether by a seal.

A seal can comprise a layer of barrier material that covers the opticalmaterial, wherein the optical material and barrier material arrangementis sandwiched between the glass plates that are sealed together by thelayer of barrier material.

A seal can comprise an edge or perimeter seal.

The seal can comprise an edge or perimeter seal.

A seal can comprise barrier material.

A seal can comprise an oxygen barrier.

A seal can comprise a water barrier.

A seal can comprise an oxygen and water barrier.

A seal can be substantially impervious to water and/or oxygen.

An optical material can be disposed on a substrate (e.g., but notlimited to, a glass plate) and completely sealed by a barrier materialthat can block the passage or oxygen and water.

Non-limiting examples of materials that can be used to form an edge orperimeter seal include a glass-to-glass seal, a glass-to-metal seal, orother barrier material with sealant properties.

In another example, an optical component can comprise an opticalmaterial included in a tubular structural member (e.g., a tube, hollowcapillary, hollow fiber, etc.) that can be sealed both ends.

It will be appreciated that other designs, configurations, andcombinations of barrier materials and/or structural members comprisingbarrier materials can be included in an optical component in which theoptical material is fully encapsulated. Such designs, configurations,and combinations can be selected based on the intended end-useapplication and design.

An optical component can include an optical material that is fullyencapsulated by materials that are substantially oxygen impervious canbe preferred.

In accordance with another aspect of the present invention, there isprovided an optical component including an optical material comprisingquantum confined semiconductor nanoparticles distributed in a hostmaterial, wherein the optical material has solid state photoluminescentquantum efficiency greater than or equal to the solution quantumefficiency of the quantum confined semiconductor nanoparticles prior toaddition of the nanoparticles to the host material.

An optical material included in the optical component can include atleast one type of quantum confined semiconductor nanoparticle withrespect to chemical composition, structure, and size. The type(s) ofquantum confined semiconductor nanoparticles included in an opticalmaterial can be determined by the wavelength of light to be convertedand the wavelengths of the desired light output. As discussed herein,quantum confined semiconductor nanoparticles may or may not include ashell and/or a ligand on a surface thereof. A shell and/or ligand canpassivate quantum confined semiconductor nanoparticles to preventagglomeration or aggregation to overcome the Van der Waals binding forcebetween the nanoparticles. As discussed herein, a shell can comprise aninorganic shell.

Two or more different type of quantum confined semiconductornanoparticles (based on composition, structure and/or size) may beincluded in an optical material included in an optical component,wherein each type is selected to obtain light having a predeterminedcolor.

An optical material can include one or more different types of quantumconfined semiconductor nanoparticles that include a core comprising afirst semiconductor material and a shell on at least a portion of theouter surface of the core, the shell comprising one or more layers,wherein each layer may comprise a semiconductor material that is thesame or different from that included in each of any other layer.

Examples of host materials include polymers, resins, silicones, andglass. Other examples of host materials are provided below.

An optical material including a host material can include up to about 30weight percent quantum confined semiconductor nanoparticles based on theweight of the host material

An optical material can further comprise light scatterers. Additionalinformation concerning light scatterers is provided below.

The amount of light scatterers can be determined based on the particularoptical component and its intended end-use application. An opticalmaterial including light scatterers can include, for example, an amountof light scatterers in a range from 0.01 weight percent based on theweight of the host material up to an amount that is the same as theamount of quantum confined semiconductor nanoparticles included in theoptical material. Other amounts of light scatterers can be included.

An optical material can further comprise other optional additives.

Examples of other optional additives can include, but are not limitedto, e.g., wetting or leveling agents).

An optical component in accordance with the invention can include anoptical material having a solid state photoluminescent efficiency thatdoes not change by more than 40% upon exposure to air for 60 days at 20°C. under fluorescent room light.

An optical component in accordance with the invention can include anoptical material having a solid state photoluminescent efficiency thatdoes not change by more than 30% upon exposure to air for 60 days at 20°C. under fluorescent room light.

An optical component in accordance with the invention can include anoptical material having a solid state photoluminescent efficiency thatdoes not change by more than 20% upon exposure to air for 60 days at 20°C. under fluorescent room light.

An optical component in accordance with the invention can include anoptical material having a solid state photoluminescent efficiency thatdoes not change by more than 10% upon exposure to air for 60 days at 20°C. under fluorescent room light.

An optical component in accordance with the invention can include anoptical material having a solid state photoluminescent efficiency thatdoes not change by more than 5% upon exposure to air for 60 days at 20°C. under fluorescent room light.

An optical component in accordance with the invention can furtherinclude a structural member that supports or contains the opticalmaterial. Such structural member can have a variety of different shapesor configurations. For example, it can be planar, curved, convex,concave, hollow, linear, circular, square, rectangular, oval, spherical,cylindrical, or any other shape or configuration that is appropriatebased on the intended end-use application and design. An example of acommon structural components is a substrates such as a plate-likemember.

An optical material can be disposed on a surface of a structural member.

An optical material can be disposed within a structural member.

For example, an optical material can be included in a cavity or hollowportion that may be included in a structural member, e.g., but notlimited to, a tube-like structural member, which can have any shapecross-section.

The dimension of an optical component can be selected based on theintended end-use application and design.

An optical component can include an optical material that is at leastpartially encapsulated.

An optical component can include an optical material that is at leastpartially encapsulated by one or more barrier materials.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialincluded in an optical component can be protected by one or more barriermaterials.

A structural member can comprise a barrier material.

A barrier material may be in the form of a structural member designedand configured based on the intended end-use application for the opticalcomponent including same.

For example, an optical component can comprise an optical material thatis at least partially encapsulated between opposing substrates, whereineach of the substrates comprises one or more barrier materials, whichcan be the same or different.

For example, an optical component can comprise an optical material thatis at least partially encapsulated between opposing structural members,wherein each of the structural members comprises one or more barriermaterials, which can be the same or different.

For example, an optical component can comprise an optical material thatis at least partially encapsulated between a structural member and acoating or layer, wherein each of the structural member and coating orlayer comprise one or more barrier materials, which can be the same ordifferent.

A barrier material can be substantially oxygen impervious.

A barrier material can be substantially water impervious.

A barrier material can be substantially oxygen and water impervious.

A barrier material can also be a structural member.

In another example, an optical component can comprise an opticalmaterial included within a structural member. For example, an opticalmaterial can be included in a hollow or cavity portion of a tubular-likestructural member (e.g., a tube, hollow capillary, hollow fiber, etc.)that can be open at either or both ends.

Other designs, configurations, and combinations of barrier materialsand/or structural members comprising barrier materials can be includedin an optical component in which the optical material is at leastpartially encapsulated. Such designs, configurations, and combinationscan be selected based on the intended end-use application and design.

Barrier material included in an optical component can be opticallytransparent to permit light to pass into and/or out of optical materialthat it may encapsulate.

Depending on the design of an optical component, a barrier materialand/or a structural member that is optically transparent may be includedin a preselected region of the optical component to permit light to passinto and/or out of such region. Such preselected region can be apredetermined area of the of the optical component or the entirecomponent, based on the design and intended end-use application.

Examples of transparent materials that can serve as barrier materialsand/or structural members, include, but are not limited to, e.g., glass,polycarbonate, hardcoated polyester, acrylic, other known materials thatare impervious to preselected environmental factors, (e.g., oxygenand/or moisture).

A barrier material and/or structural member can be flexible (e.g. butnot limited to thin acrylic, epoxy, polycarbonate, PEN, PET, PE).

A barrier material can be a composite, consisting of multiple layers ofdifferent components, or coatings on a substrate.

A barrier material and/or structural member can be rigid (e.g. but notlimited to glass, thick acrylic, thick transparent polymers, may be acomposite or coated with layers (e.g. SiO_(x)) to improve barrierproperties.

A barrier material and/or a structural member can have surface that issmooth or roughened.

A barrier material and/or a structural member can have a thickness thatis substantially uniform.

As mentioned above, an optical component can include an optical materialthat is fully encapsulated.

Preferably all of the surface area of the optical material included inan optical component is protected by one or more barrier materials.

For example, an optical component can include an optical material thatis fully encapsulated by a barrier material or structural member or by acombination of two or more barrier materials and/or structural members.

An optical component including an optical material that is fullyencapsulated by one or more barrier materials and/or structural member scan further include a seal to join such materials and/or structuralmembers together. A seal can comprise a material that also blocks thepassage of oxygen and moisture.

For example, an optical component can include an optical material thatis encapsulated between opposing barrier materials that are sealedtogether by another barrier material or sealant. An example of thisarrangement includes an optical material that is fully encapsulatedbetween opposing substrates (e.g., glass plates) that are sealedtogether by a seal.

A seal can comprise a layer of barrier material that covers the opticalmaterial, wherein the optical material and barrier material arrangementis sandwiched between the glass plates that are sealed together by thelayer of barrier material.

A seal can comprise an edge or perimeter seal.

The seal can comprise an edge or perimeter seal.

A seal can comprise barrier material.

A seal can comprise an oxygen barrier.

A seal can comprise a water barrier.

A seal can comprise an oxygen and water barrier.

A seal can be substantially impervious to water and/or oxygen.

An optical material can be disposed on a substrate (e.g., a glass plate)and completely sealed by a barrier material that can block the passageor oxygen and water.

Non-limiting examples of materials that can be used to form an edge orperimeter seal include a glass-to-glass seal, a glass-to-metal seal, orother barrier material with sealant properties.

In another example, an optical component can comprise an opticalmaterial included in a tubular structural member (e.g., a tube, hollowcapillary, hollow fiber, etc.) that can be sealed both ends.

It will be appreciated that other designs, configurations, andcombinations of barrier materials and/or structural members comprisingbarrier materials can be included in an optical component in which theoptical material is fully encapsulated. Such designs, configurations,and combinations can be selected based on the intended end-useapplication and design.

An optical component including an optical material that is fullyencapsulated by materials that are substantially oxygen impervious canbe preferred.

In accordance with another aspect of the present invention, there isprovided a method for treating an optical material comprising quantumconfined semiconductor nanoparticles, the method comprising exposing theoptical material to a light flux and heat for a period of timesufficient to increase the solid state photoluminescent quantumefficiency of the optical material by at least 10% of its pre-exposuresolid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical material to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical material by at least 20% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical material to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical material by at least 30% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical material to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical material by at least 40% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical material to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical material by at least 50% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

Examples of host materials include polymers, resins, silicones, andglass. Other examples of host materials are provided below.

An optical material including a host material can include up to about 30weight percent quantum confined semiconductor nanoparticles based on theweight of the host material.

An optical material can further comprise light scatterers. Additionalinformation concerning light scatterers is provided below.

The amount of light scatterers can be determined based on the particularoptical component and its intended end-use application. An opticalmaterial including light scatterers can include, for example, an amountof light scatterers in a range from 0.01 weight percent based on theweight of the host material up to an amount that is the same as theamount of quantum confined semiconductor nanoparticles included in theoptical material. Other amounts of light scatterers can be included.

An optical material can further comprise other optional additives.

Examples of other optional additives can include, but are not limitedto, e.g., wetting or leveling agents).

The method can comprise exposing the optical material to light flux andheat for a period of time until the solid state photoluminescentefficiency increases to a substantially constant value.

The method can comprise exposing the optical material to light flux andheat at the same time.

The method can comprise exposing the optical material to heat during atleast a portion of the time the optical material is exposed to lightflux.

The method can comprise exposing the optical material to light flux andheat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can further include exposing optical material to light fluxand heat when the optical material is at least partially encapsulated.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialbeing treated can be protected by one or more barrier materials.

An optical material can be at least partially encapsulated by one ormore barrier materials. Examples of barrier materials and combinationsof barrier materials are described elsewhere herein.

The method can comprise an optical material is at least partiallyencapsulated by including the optical material on a barrier material(e.g., a glass substrate) and including a coating over at least aportion of a surface of the optical material opposite the barriermaterial.

The method can comprise an optical material is at least partiallyencapsulated by sandwiching the optical material between barriermaterials (e.g., glass plates and/or other types of substrates.

The method can comprise exposing unencapsulated or partiallyencapsulated optical material to light flux and heat to achieve thedesired result and fully encapsulating optical material followingexposure to light flux and heat.

The method can further include exposing optical material to light fluxand heat when the optical material is fully encapsulated.

An optical material can be fully encapsulated by one or more barriermaterials.

Preferably all of the surface area of the optical material being treatedis protected by one or more barrier materials

The method can comprise an optical material that is encapsulated betweenopposing substrates that are sealed together by a seal, wherein each ofthe substrates and seal are substantially oxygen impervious.

The method can comprise an optical material that is encapsulated betweenopposing substrates are sealed together by a seal, wherein each of thesubstrates and seal are substantially water impervious.

The method can comprise an optical material that is encapsulated betweenopposing substrates are sealed together by a seal, wherein each of thesubstrates and seal are substantially oxygen and water impervious.

The method can comprise an optical material that is disposed on asubstrate and the optical material is covered by a coating comprising abarrier material.

The method can comprise a barrier material comprising a material that issubstantially oxygen impervious.

The method can comprise a barrier material that is substantially waterimpervious.

The method can comprise a barrier material that is substantially oxygenand water impervious.

A substrate that may be used in a method in accordance with theinvention can comprise one or more barrier materials.

A substrate that may be used in a method in accordance with theinvention can comprise glass. Other barrier materials are describedherein.

The method can comprise an optical material is encapsulated betweenglass plates that are sealed together by barrier material.

The method can comprise an optical material that is encapsulated betweenglass plates that are sealed together by a glass-to-glass perimeter oredge seal.

The method can comprise an optical material is encapsulated betweenglass plates that are sealed together by a glass-to-metal perimeter oredge seal.

The method can comprise an optical material that is encapsulated betweenglass plates that are sealed together by an epoxy or other sealant withbarrier material properties.

An optical material can be exposed to light flux by irradiating theoptical material with light from a light source having the desired peakwavelength and intensity.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise a peak wavelength in a range from about 365nm to about 470 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

Light flux can be provided by a light source comprising a light sourcewith peak wavelength that is less than the bandgap of the opticalmaterial.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 365 nm to about 480nm.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 365 nm to about 470nm.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 450 nm to about 470nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 365 nm toabout 480 nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 365 nm toabout 470 nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 450 nm toabout 470 nm.

The light flux can be in a range from about 10 to about 100 mW/cm².

The light flux can be in a range from about 30 to about 50 mW/cm2.

The light flux can be in a range from about 20 to about 35 mW/cm2,

The light flux can be in a range from about 20 to about 30 mW/cm2.

Other types of light sources that can emit light at the desiredwavelength and with the desired intensity can also be used.

Preferably, the light flux to which the optical material is exposed isuniform.

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature greater than 20° C.

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature of at least 25° C.

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature in a range from about 25° to about 80° C.

Preferably, the temperature does not exceed a temperature which isdetrimental to the performance of the optical material or anyencapsulation material.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical material.

Other information provided herein may also be useful in practicing theabove method.

In accordance with another aspect of the present invention, there isprovided a method for treating an optical material comprising quantumconfined semiconductor nanoparticles, the method comprising exposing theoptical material to a light flux and heat for a period of timesufficient to achieve a solid state photoluminescent efficiency of theoptical material greater than or equal to about 60%.

For example, the optical material can have solid state photoluminescentquantum efficiency greater than or equal to 65%, greater than 70%,greater than 75%, greater than 80%, greater than 85%, greater than 90%,etc.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

Examples of host materials include polymers, resins, silicones, andglass. Other examples of host materials are provided below.

An optical material including a host material can include up to about 30weight percent quantum confined semiconductor nanoparticles based on theweight of the host material.

An optical material can further comprise light scatterers. Additionalinformation concerning light scatterers is provided below.

The amount of light scatterers can be determined based on the particularoptical component and its intended end-use application. An opticalmaterial including light scatterers can include, for example, an amountof light scatterers in a range from 0.01 weight percent based on theweight of the host material up to an amount that is the same as theamount of quantum confined semiconductor nanoparticles included in theoptical material. Other amounts of light scatterers can be included.

An optical material can further comprise other optional additives.

Examples of other optional additives can include, but are not limitedto, e.g., wetting or leveling agents).

The method can comprise exposing the optical material to light flux andheat for a period of time until the solid state photoluminescentefficiency increases to a substantially constant value.

The method can comprise exposing the optical material to light flux andheat at the same time.

The method can comprise exposing the optical material to heat during atleast a portion of the time the optical material is exposed to lightflux.

The method can comprise exposing the optical material to light flux andheat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can further include exposing optical material to light fluxand heat when the optical material is at least partially encapsulated.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialbeing treated can be protected by one or more barrier materials

An optical material can be at least partially encapsulated by one ormore barrier materials. Examples of barrier materials and combinationsof barrier materials are described elsewhere herein.

The method can comprise an optical material is at least partiallyencapsulated by including the optical material on a barrier material(e.g., a glass substrate) and including a coating over at least aportion of a surface of the optical material opposite the barriermaterial.

The method can comprise an optical material is at least partiallyencapsulated by sandwiching the optical material between barriermaterials (e.g., glass plates and/or other types of substrates.

The method can comprise exposing unencapsulated or partiallyencapsulated optical material to light flux and heat to achieve thedesired result and fully encapsulating optical material followingexposure to light flux and heat.

The method can further include exposing optical material to light fluxand heat when the optical material is fully encapsulated.

Preferably all of the surface area of the optical material being treatedis protected by one or more barrier materials.

An optical material can be fully encapsulated by one or more barriermaterials.

The method can comprise an optical material that is encapsulated betweenopposing substrates that are sealed together by a seal, wherein each ofthe substrates and seal are substantially oxygen impervious.

The method can comprise an optical material that is encapsulated betweenopposing substrates are sealed together by a seal, wherein each of thesubstrates and seal are substantially water impervious.

The method can comprise an optical material that is encapsulated betweenopposing substrates are sealed together by a seal, wherein each of thesubstrates and seal are substantially oxygen and water impervious.

The method can comprise an optical material that is disposed on asubstrate and the optical material is covered by a coating comprising abarrier material.

The method can comprise a barrier material comprising a material that issubstantially oxygen impervious.

The method can comprise a barrier material that is substantially waterimpervious.

The method can comprise a barrier material that is substantially oxygenand water impervious.

A substrate that may be used in a method in accordance with theinvention can comprise one or more barrier materials.

A substrate that may be used in a method in accordance with theinvention can comprise glass. Other barrier materials are describedherein.

The method can comprise an optical material is encapsulated betweenglass plates that are sealed together by barrier material.

The method can comprise an optical material that is encapsulated betweenglass plates that are sealed together by a glass-to-glass perimeter oredge seal.

The method can comprise an optical material is encapsulated betweenglass plates that are sealed together by a glass-to-metal perimeter oredge seal.

The method can comprise an optical material that is encapsulated betweenglass plates that are sealed together by an epoxy or other sealant withbarrier material properties.

An optical material can be exposed to light flux by irradiating theoptical material with light from a light source having the desired peakwavelength and intensity.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise a peak wavelength in a range from about 365nm to about 470 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

Light flux can be provided by a light source comprising a light sourcewith peak wavelength that is less than the bandgap of the opticalmaterial.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 365 nm to about 480nm.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 365 nm to about 470nm.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 450 nm to about 470nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 365 nm toabout 480 nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 365 nm toabout 470 nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 450 nm toabout 470 nm.

The light flux can be in a range from about 10 to about 100 mW/cm².

The light flux can be in a range from about 30 to about 50 mW/cm2.

The light flux can be in a range from about 20 to about 35 mW/cm2,

The light flux can be in a range from about 20 to about 30 mW/cm2.

Other types of light sources that can emit light at the desiredwavelength and with the desired intensity can also be used.

Preferably, the light flux to which the optical material is exposed isuniform.

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature greater than 20° C.

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature of at least 25° C.

Exposing the optical material to heat can comprise exposing the opticalmaterial to a temperature in a range from about 25° to about 80° C.

Preferably, the temperature does not exceed a temperature which isdetrimental to the performance of the optical material or anyencapsulation material.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical material.

Other information provided herein may also be useful in practicing theabove method.

In accordance with yet another aspect of the present invention, there isprovided a method for treating an optical material comprising quantumconfined semiconductor nanoparticles, the method comprising exposing atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to increase the solid state photoluminescentquantum efficiency of the optical material by at least 10% of itspre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time sufficient toincrease solid state photoluminescent efficiency of the optical materialby at least 20% of its pre-exposure solid state photoluminescent quantumefficiency value.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time sufficient toincrease solid state photoluminescent efficiency of the optical materialby at least 30% of its pre-exposure solid state photoluminescent quantumefficiency value.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time sufficient toincrease solid state photoluminescent efficiency of the optical materialby at least 40% of its pre-exposure solid state photoluminescent quantumefficiency value.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time sufficient toincrease solid state photoluminescent efficiency of the optical materialby at least 50% of its pre-exposure solid state photoluminescent quantumefficiency value.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time until the solidstate photoluminescent efficiency increases to a substantially constantvalue.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialbeing treated can be protected by one or more barrier materials.

The method can further include exposing optical material to light fluxwhen the optical material is fully encapsulated.

Preferably all of the surface area of the optical material being treatedis protected by one or more barrier materials.

In certain preferred embodiments, the optical material is fullyencapsulated.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can further comprise exposing the at least partiallyencapsulated optical material to a light flux and heat at the same time.

The method can comprise exposing the at least partially encapsulatedoptical material to heat during at least a portion of the time theoptical material is exposed to light flux.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux to light flux and heat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can include exposing optical material to light flux when theoptical material is fully encapsulated.

The method can comprise exposing partially encapsulated optical materialto light flux to achieve the desired result and fully encapsulatingoptical material following exposure to light flux.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature greater than 20° C.

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature of at least 25° C.

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature in a range from about 25° to about 80° C.

The optical material can further comprise a host material in which thenanoparticles are distributed.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical material.

Other information provided herein may also be useful in practicing theabove method.

In accordance with yet another aspect of the present invention, there isprovided a method for treating an optical material comprising quantumconfined semiconductor nanoparticles, the method comprising exposing atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to achieve a solid state photoluminescentefficiency of the optical material greater than or equal to about 60%.

For example, the at least partially encapsulated optical material can beexposed to light flux for a period of time sufficient to achieve a solidstate photoluminescent quantum efficiency greater than or equal to 65%,greater than 70%, greater than 75%, greater than 80%, greater than 85%,greater than 90%, etc.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialbeing treated can be protected by one or more barrier materials.

The method can further include exposing optical material to light fluxwhen the optical material is fully encapsulated.

Preferably all of the surface area of the optical material being treatedis protected by one or more barrier materials.

Other information provided herein can also be useful with the abovemethod.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux for a period of time until the solidstate photoluminescent efficiency increases to a substantially constantvalue.

The method can further comprise exposing the at least partiallyencapsulated optical material to a light flux and heat at the same time.

The method can comprise exposing the at least partially encapsulatedoptical material to heat during at least a portion of the time theoptical material is exposed to light flux.

The method can comprise exposing the at least partially encapsulatedoptical material to a light flux to light flux and heat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can include exposing optical material to light flux when theoptical material is fully encapsulated.

The method can comprise exposing partially encapsulated optical materialto light flux to achieve the desired result and fully encapsulatingoptical material following exposure to light flux.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature greater than 20° C.

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature of at least 25° C.

If the method further includes exposing the optical material to heat,exposing to heat can comprise exposing the optical material to atemperature in a range from about 25° to about 80° C.

The optical material can further comprise a host material in which thenanoparticles are distributed.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical material.

Other information provided herein may also be useful in practicing theabove method.

In accordance with a further aspect of the present invention, there isprovided a method for improving at least one of solid statephotoluminescent efficiency and a performance stability property of anoptical material comprising quantum confined semiconductornanoparticles, wherein the method comprises a method taught herein fortreating an optical material.

Other information provided herein may also be useful in practicing theabove method.

An optical material treated in accordance with methods for treating anoptical material disclosed herein can have a solid statephotoluminescent efficiency that does not change by more than 40% uponexposure to air for 60 days at 20° C. under fluorescent room light.

An optical material treated in accordance with the invention can have asolid state photoluminescent efficiency of the material that does notchange by more than 30% upon exposure to air for 60 days at 20° C. underfluorescent room light.

An optical material treated in accordance with the invention can have asolid state photoluminescent efficiency of the material that does notchange by more than 20% upon exposure to air for 60 days at 20° C. underfluorescent room light.

An optical material treated in accordance with the invention can have asolid state photoluminescent efficiency of the material that does notchange by more than 10% upon exposure to air for 60 days at 20° C. underfluorescent room light.

An optical material treated in accordance with the invention can have asolid state photoluminescent efficiency of the material that does notchange by more than 5% upon exposure to air for 60 days at 20° C. underfluorescent room light.

In accordance with another aspect of the present invention, there isprovided a method for treating an optical component including an opticalmaterial comprising quantum confined semiconductor nanoparticles, themethod comprising exposing the optical component to a light flux andheat for a period of time sufficient to increase the solid statephotoluminescent quantum efficiency of the optical material by at least10% of its pre-exposure solid state photoluminescent quantum efficiencyvalue.

The method can comprise exposing the optical component to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical component by at least 20% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical component by at least 30% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical component by at least 40% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component to light flux andheat for a period of time sufficient to increase solid statephotoluminescent efficiency of the optical component by at least 50% ofits pre-exposure solid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component to light flux andheat for a period of time until the solid state photoluminescentefficiency increases to a substantially constant value.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

Examples of host materials include polymers, resins, silicones, andglass. Other examples of host materials are provided below.

An optical material including a host material can include up to about 30weight percent quantum confined semiconductor nanoparticles based on theweight of the host material.

An optical material can further comprise light scatterers. Additionalinformation concerning light scatterers is provided below.

The amount of light scatterers can be determined based on the particularoptical component and its intended end-use application. An opticalmaterial including light scatterers can include, for example, an amountof light scatterers in a range from 0.01 weight percent based on theweight of the host material up to an amount that is the same as theamount of quantum confined semiconductor nanoparticles included in theoptical material. Other amounts of light scatterers can be included.

An optical material can further comprise other optional additives.

Examples of other optional additives can include, but are not limitedto, e.g., wetting or leveling agents).

The method can comprise exposing the optical component to light flux andheat at the same time.

The method can comprise exposing the optical component to heat during atleast a portion of the time the optical material is exposed to lightflux.

The method can comprise exposing the optical component to light flux andheat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can further include exposing optical component to light fluxand heat when the optical material is at least partially encapsulated.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialincluded in an optical component being treated can be protected by oneor more barrier materials.

An optical material can be at least partially encapsulated by one ormore barrier materials. Examples of barrier materials and combinationsof barrier materials are described elsewhere herein.

The method can comprise an optical component including an opticalmaterial is at least partially encapsulated by including the opticalmaterial on a barrier material (e.g., a glass substrate) and including acoating over at least a portion of a surface of the optical materialopposite the barrier material.

The method can comprise an optical component including an opticalmaterial is at least partially encapsulated by sandwiching the opticalmaterial between barrier materials (e.g., glass plates and/or othertypes of substrates.

The method can comprise exposing an optical component includingunencapsulated or partially encapsulated optical material to light fluxand heat to achieve the desired result and fully encapsulating opticalmaterial following exposure to light flux and heat.

The method can further include exposing an optical component to lightflux and heat when the optical material is fully encapsulated.

An optical material can be fully encapsulated by one or more barriermaterials.

Preferably all of the surface area of the optical material included inan optical component being treated is protected by one or more barriermaterials.

The method can comprise an optical component including an opticalmaterial that is encapsulated between opposing substrates that aresealed together by a seal, wherein each of the substrates and seal aresubstantially oxygen impervious.

The method can comprise an optical component including an opticalmaterial that is encapsulated between opposing substrates are sealedtogether by a seal, wherein each of the substrates and seal aresubstantially water impervious.

The method can comprise an optical component including an opticalmaterial that is encapsulated between opposing substrates are sealedtogether by a seal, wherein each of the substrates and seal aresubstantially oxygen and water impervious.

The method can comprise an optical component including an opticalmaterial that is disposed on a substrate and the optical material iscovered by a coating comprising a barrier material.

The method can comprise a barrier material comprising a material that issubstantially oxygen impervious.

The method can comprise a barrier material that is substantially waterimpervious.

The method can comprise a barrier material that is substantially oxygenand water impervious.

A substrate that may be used in a method in accordance with theinvention can comprise one or more barrier materials.

A substrate that may be used in a method in accordance with theinvention can comprise glass. Other barrier materials are describedherein.

The method can comprise an optical material is encapsulated betweenglass plates that are sealed together by barrier material.

The method can comprise an optical component including an opticalmaterial that is encapsulated between glass plates that are sealedtogether by a glass-to-glass perimeter or edge seal.

The method can comprise an optical component including an opticalmaterial is encapsulated between glass plates that are sealed togetherby a glass-to-metal perimeter or edge seal.

The method can comprise an optical component including an opticalmaterial that is encapsulated between glass plates that are sealedtogether by an epoxy or other sealant with barrier material properties.

An optical component including optical material can be exposed to lightflux by irradiating the optical material with light from a light sourcehaving the desired peak wavelength and intensity.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise a peak wavelength in a range from about 365nm to about 470 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

Light flux can be provided by a light source comprising a light sourcewith peak wavelength that is less than the bandgap of the opticalmaterial.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 365 nm to about 480nm.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 365 nm to about 470nm.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 450 nm to about 470nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 365 nm toabout 480 nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 365 nm toabout 470 nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 450 nm toabout 470 nm.

The light flux can be in a range from about 10 to about 100 mW/cm².

The light flux can be in a range from about 30 to about 50 mW/cm2.

The light flux can be in a range from about 20 to about 35 mW/cm2,

The light flux can be in a range from about 20 to about 30 mW/cm2.

Other types of light sources that can emit light at the desiredwavelength and with the desired intensity can also be used.

Preferably, the light flux to which the optical material is exposed isuniform.

Exposing an optical component including optical material to heat cancomprise exposing the optical material to a temperature greater than 20°C.

Exposing an optical component including optical material to heat cancomprise exposing the optical material to a temperature of at least 25°C.

Exposing an optical component including optical material to heat cancomprise exposing the optical material to a temperature in a range fromabout 25° to about 80° C.

Preferably, the temperature does not exceed a temperature which isdetrimental to the performance of the optical material or anyencapsulation material.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated an optical componentincluding optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated an optical componentincluding optical material.

Other information provided herein may also be useful in practicing theabove method.

In accordance with another aspect of the present invention, there isprovided a method for treating an optical component including an opticalmaterial comprising quantum confined semiconductor nanoparticles, themethod comprising exposing the optical component to a light flux andheat for a period of time sufficient to achieve a solid statephotoluminescent efficiency of the optical material greater than orequal to about 60%.

For example, the optical component can be exposed to light flux and heatfor a period of time sufficient to achieve a solid statephotoluminescent quantum efficiency greater than or equal to 65%,greater than 70%, greater than 75%, greater than 80%, greater than 85%,greater than 90%, etc.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

Examples of host materials include polymers, resins, silicones, andglass. Other examples of host materials are provided below.

An optical material including a host material can include up to about 30weight percent quantum confined semiconductor nanoparticles based on theweight of the host material.

An optical material can further comprise light scatterers. Additionalinformation concerning light scatterers is provided below.

The amount of light scatterers can be determined based on the particularoptical component and its intended end-use application. An opticalmaterial including light scatterers can include, for example, an amountof light scatterers in a range from 0.01 weight percent based on theweight of the host material up to an amount that is the same as theamount of quantum confined semiconductor nanoparticles included in theoptical material. Other amounts of light scatterers can be included.

An optical material can further comprise other optional additives.

Examples of other optional additives can include, but are not limitedto, e.g., wetting or leveling agents).

The method can comprise exposing the optical component to light flux andheat at the same time.

The method can comprise exposing the optical component to heat during atleast a portion of the time the optical material is exposed to lightflux.

The method can comprise exposing the optical component to light flux andheat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can further include exposing optical component to light fluxand heat when the optical material is at least partially encapsulated.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialincluded in an optical component being treated can be protected by oneor more barrier materials.

An optical material can be at least partially encapsulated by one ormore barrier materials. Examples of barrier materials and combinationsof barrier materials are described elsewhere herein.

The method can comprise an optical component including an opticalmaterial is at least partially encapsulated by including the opticalmaterial on a barrier material (e.g., a glass substrate) and including acoating over at least a portion of a surface of the optical materialopposite the barrier material.

The method can comprise an optical component including an opticalmaterial is at least partially encapsulated by sandwiching the opticalmaterial between barrier materials (e.g., glass plates and/or othertypes of substrates).

The method can comprise exposing an optical component includingunencapsulated or partially encapsulated optical material to light fluxand heat to achieve the desired result and fully encapsulating opticalmaterial following exposure to light flux and heat. Such fullencapsulation step can be carried out in a oxygen free environment. Suchfull encapsulation step can be carried out in a oxygen and water freeenvironment.

The method can further include exposing an optical component to lightflux and heat when the optical material is fully encapsulated.

An optical material can be fully encapsulated by one or more barriermaterials.

Preferably all of the surface area of the optical material included inan optical component being treated is protected by one or more barriermaterials.

The method can comprise an optical component including an opticalmaterial that is encapsulated between opposing substrates that aresealed together by a seal, wherein each of the substrates and seal aresubstantially oxygen impervious.

The method can comprise an optical component including an opticalmaterial that is encapsulated between opposing substrates are sealedtogether by a seal, wherein each of the substrates and seal aresubstantially water impervious.

The method can comprise an optical component including an opticalmaterial that is encapsulated between opposing substrates are sealedtogether by a seal, wherein each of the substrates and seal aresubstantially oxygen and water impervious.

The method can comprise an optical component including an opticalmaterial that is disposed on a substrate and the optical material iscovered by a coating comprising a barrier material.

The method can comprise a barrier material comprising a material that issubstantially oxygen impervious.

The method can comprise a barrier material that is substantially waterimpervious.

The method can comprise a barrier material that is substantially oxygenand water impervious.

A substrate that may be used in a method in accordance with theinvention can comprise one or more barrier materials.

A substrate that may be used in a method in accordance with theinvention can comprise glass. Other barrier materials are describedherein.

The method can comprise an optical material is encapsulated betweenglass plates that are sealed together by barrier material.

The method can comprise an optical component including an opticalmaterial that is encapsulated between glass plates that are sealedtogether by a glass-to-glass perimeter or edge seal.

The method can comprise an optical component including an opticalmaterial is encapsulated between glass plates that are sealed togetherby a glass-to-metal perimeter or edge seal.

The method can comprise an optical component including an opticalmaterial that is encapsulated between glass plates that are sealedtogether by an epoxy or other sealant with barrier material properties.

An optical component including optical material can be exposed to lightflux by irradiating the optical material with light from a light sourcehaving the desired peak wavelength and intensity.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise a peak wavelength in a range from about 365nm to about 470 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

Light flux can be provided by a light source comprising a light sourcewith peak wavelength that is less than the bandgap of the opticalmaterial.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 365 nm to about 480nm.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 365 nm to about 470nm.

Light flux can be provided by a light source comprising an LED lightsource with peak wavelength in a range from about 450 nm to about 470nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 365 nm toabout 480 nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 365 nm toabout 470 nm.

Light flux can be provided by a light source comprising a fluorescentlamp that emits light with a wavelength in a range from about 450 nm toabout 470 nm.

The light flux can be in a range from about 10 to about 100 mW/cm².

The light flux can be in a range from about 30 to about 50 mW/cm2.

The light flux can be in a range from about 20 to about 35 mW/cm2,

The light flux can be in a range from about 20 to about 30 mW/cm2.

Other types of light sources that can emit light at the desiredwavelength and with the desired intensity can also be used.

Preferably, the light flux to which the optical material is exposed isuniform.

Exposing an optical component including optical material to heat cancomprise exposing the optical material to a temperature greater than 20°C.

Exposing an optical component including optical material to heat cancomprise exposing the optical material to a temperature of at least 25°C.

Exposing an optical component including optical material to heat cancomprise exposing the optical material to a temperature in a range fromabout 25° to about 80° C.

Preferably, the temperature does not exceed a temperature which isdetrimental to the performance of the optical material or anyencapsulation material.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated an optical componentincluding optical material.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated an optical componentincluding optical material.

Other information provided herein may also be useful in practicing theabove method.

In accordance with a still further aspect of the present invention,there is provided a method for treating an optical component includingan optical material comprising quantum confined semiconductornanoparticles, the method comprising exposing an optical componentincluding at least partially encapsulated optical material to a lightflux for a period of time sufficient to increase the solid statephotoluminescent quantum efficiency of the optical material by at least10% of its pre-exposure solid state photoluminescent quantum efficiencyvalue.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to increase solid state photoluminescentefficiency of the optical material by at least 20% of its pre-exposuresolid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to increase solid state photoluminescentefficiency of the optical material by at least 30% of its pre-exposuresolid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to increase solid state photoluminescentefficiency of the optical material by at least 40% of its pre-exposuresolid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time sufficient to increase solid state photoluminescentefficiency of the optical material by at least 50% of its pre-exposuresolid state photoluminescent quantum efficiency value.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time until the solid state photoluminescent efficiencyincreases to a substantially constant value.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialincluded in an optical component being treated can be protected by oneor more barrier materials.

The method can further include exposing an optical component to lightflux when the optical material is fully encapsulated.

In certain preferred embodiments, the optical material is fullyencapsulated.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time until the solid state photoluminescent efficiencyincreases to a substantially constant value.

The method can further comprise exposing the optical component includingat least partially encapsulated optical material to a light flux andheat at the same time.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to heat during at least aportion of the time the optical material is exposed to light flux.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux to lightflux and heat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can include exposing optical component including opticalmaterial to light flux when the optical material is fully encapsulated.

The method can comprise exposing optical component including partiallyencapsulated optical material to light flux to achieve the desiredresult and fully encapsulating optical material following exposure tolight flux.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature greater than 20° C.

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature of at least 25° C.

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature in a range from about 25° to about 80° C.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical component.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical component.

Other information provided herein may also be useful in practicing theabove method.

In accordance with a further aspect of the present invention, there isprovided a method for treating an optical component including an opticalmaterial comprising quantum confined semiconductor nanoparticles, themethod comprising exposing the optical component including at leastpartially encapsulated optical material to a light flux for a period oftime sufficient to achieve a solid state photoluminescent efficiency ofthe optical material greater than or equal to about 60%.

For example, the optical component including at least partiallyencapsulated optical material can be exposed to light flux for a periodof time sufficient to achieve a solid state photoluminescent quantumefficiency greater than or equal to 65%, greater than 70%, greater than75%, greater than 80%, greater than 85%, greater than 90%, etc.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time until the solid state photoluminescent efficiencyincreases to a substantially constant value.

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialincluded in an optical component being treated can be protected by oneor more barrier materials.

In certain preferred embodiments, the optical material is fullyencapsulated.

The optical material can further comprise a host material in which thenanoparticles are dispersed.

The optical material can further comprise light scatterers.

The optical material can further comprise other optional additives.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux for aperiod of time until the solid state photoluminescent efficiencyincreases to a substantially constant value.

The method can further comprise exposing the optical component includingat least partially encapsulated optical material to a light flux andheat at the same time.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to heat during at least aportion of the time the optical material is exposed to light flux.

The method can comprise exposing the optical component including atleast partially encapsulated optical material to a light flux to lightflux and heat sequentially.

The method can be carried out in a nitrogen atmosphere.

The method can be carried out in an atmosphere that includes oxygen(e.g., but not limited to, air).

The method can be carried out in an inert atmosphere.

The method can include exposing optical component including opticalmaterial to light flux when the optical material is fully encapsulated.

The method can comprise exposing optical component including partiallyencapsulated optical material to light flux to achieve the desiredresult and fully encapsulating optical material following exposure tolight flux.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise peak wavelength in a range from about 450 nmto about 470 nm.

The light flux can have a center wavelength less than the bandgap of thequantum confined semiconductor nanoparticles included in the opticalmaterial included in the optical component.

The light flux can be in a range from about 10 to about 100 mW/cm².

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature greater than 20° C.

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature of at least 25° C.

If the method further includes exposing the optical component to heat,exposing to heat can comprise exposing the optical component to atemperature in a range from about 25° to about 80° C.

The method can provide stabilized the color attributes ofphotoluminescent emission from the treated optical component.

The method can provide stabilized peak emission wavelength ofphotoluminescent emission from the treated optical component.

Other information provided herein may also be useful in practicing theabove method.

In accordance with a further aspect of the present invention, there isprovided a method for improving at least one of solid statephotoluminescent efficiency and a performance stability property of anoptical component including an optical material comprising quantumconfined semiconductor nanoparticles, wherein the method comprises amethod taught herein for treating an optical component.

An optical component treated in accordance with the invention caninclude an optical material having a solid state photoluminescentefficiency that does not change by more than 40% upon exposure to airfor 60 days at 20° C. under fluorescent room light.

An optical component treated in accordance with the invention caninclude an optical material having a solid state photoluminescentefficiency that does not change by more than 30% upon exposure to airfor 60 days at 20° C. under fluorescent room light.

An optical component treated in accordance with the invention caninclude an optical material having a solid state photoluminescentefficiency that does not change by more than 20% upon exposure to airfor 60 days at 20° C. under fluorescent room light.

An optical component treated in accordance with the invention caninclude an optical material having a solid state photoluminescentefficiency that does not change by more than 10% upon exposure to airfor 60 days at 20° C. under fluorescent room light.

An optical component treated in accordance with the invention caninclude an optical material having a solid state photoluminescentefficiency that does not change by more than 5% upon exposure to air for60 days at 20° C. under fluorescent room light.

In accordance with another aspect of the present invention, there isprovided a device including an optical material taught herein.

In accordance with another aspect of the present invention, there isprovided a device including an optical material treated by a methodtaught herein.

In accordance with another aspect of the present invention, there isprovided a device including an optical component taught herein.

In accordance with another aspect of the present invention, there isprovided a device including an optical component treated by a methodtaught herein.

In accordance with another aspect of the present invention, there isprovided a method for improving the solid state photoluminescentefficiency of an optical material comprising quantum confinedsemiconductor nanocrystals that has been previously handled in orexposed to an atmosphere including oxygen. The method comprises exposingthe previously oxygen exposed optical material comprising quantumconfined semiconductor nanocrystals to light flux for a period of timesufficient to increase the solid state photoluminescent efficiencythereof, wherein the optical material is partially encapsulated duringthe exposure step.

The method can be carried out in an atmosphere that includes oxygen.

The method can be carried out in an inert atmosphere.

The method can be carried out in a nitrogen atmosphere.

The light flux can comprise a peak wavelength in a range from about 365nm to about 480 nm.

The light flux can comprise a peak wavelength in a range from about 365nm to about 470 nm.

The light flux can comprise a peak wavelength that is less than thebandgap of the nanoparticles.

The light flux can be in a range from about 10 to about 100 mW/cm².

Optical material can be partially encapsulated to various extents.

For example, more than 50% of the surface area of the optical materialbeing treated can be protected by one or more barrier materials.

The method can further include exposing optical material to light fluxwhen the optical material is fully encapsulated.

Preferably, the optical material is fully encapsulated.

The method can further include exposing the optical material to heat atleast a portion of the time the optical component is exposed to lightflux.

The method can further include exposing the optical material to heatduring the total time the optical component is exposed to light flux.

Exposing the optical material to heat can comprise heating the opticalmaterial at a temperature greater than 20° C.

An optical material can comprise quantum confined semiconductornanoparticles that include a core comprising a first semiconductormaterial and a shell on at least a portion of the outer surface of thecore, the shell comprising one or more layers, wherein each layer maycomprise a semiconductor material that is the same or different fromthat included in each of any other layer.

The method can further include fully encapsulating the optical materialfollowing exposure to light flux and heat. Such encapsulation step canbe carried out in an oxygen free environment.

Preferably, the optical material is fully encapsulated while beingexposed to light flux.

The optical material can be at least partially or fully encapsulated byone or more barrier materials.

A barrier material can comprise a material that is a barrier to oxygen.

A barrier material can comprise a material that is a barrier to oxygenand water.

An optical material can be included in an optical component or otherdevice when exposed to light flux.

In accordance with another aspect of the invention, there is provided anoptical material and an optical component treated by methods taughtherein.

FIG. 1 provides a schematic diagram of an example of a set-up that canbe useful in carrying out the methods taught herein. In the Figure, “PLSamples” refer to placement of optical materials and/or opticalcomponents in the configuration during treatment. As depicted, the lightsources are LEDs, but as discussed herein, other types of light sourcescan be used. The inner surface of the set-up can be light reflective.

In the methods taught herein, exposing an optical material or opticalcomponent, as the case may be, can comprise for example, carrying outthe irradiation step in an oven (e.g., an IR oven, a convection oven,etc.), on a hot plate, etc. Other heating techniques readilyascertainable by the skill artisan can also be used. Heating of theoptical material and/or optical component during exposure to light flux(e.g., irradiation by a light source) can accelerate or assist theradiation effects thereon. For example, heating at a temperature in arange from about 25 to about 80 C.° can reduce irradiation time to reacha constant solid state photoluminescent efficiency to less than 24hours, less than 12 hours, less than 6 hours, less than 3 hours, lessthan 30 minutes/

In addition to other information regarding light flux provided elsewhereherein, examples of light sources that can be utilized for theirradiation step include, but are not limited to, blue (e.g., 400-500nm) light-emitting diodes (LEDs), blue emitting fluorescent lamps, etc.

Examples of blue emitting fluorescent lamps are available from NARVA(Germany). In certain embodiments, the light source comprises NARVAmodel LT 54 W T-5-HQ/0182 blue 2.

Examples of techniques that can be used to measure light flux include UVdetectors that are sensitive to the wavelength of the radiation source.For example, an Ophir Nova Laser Power Meter (part number 7Z01500)including an Ophir UV detector head (part number PD300-UV-SH-ROHS)(preferably a detector head filter is installed) can be used with a 450nm LED radiation source.

Light flux is preferably measured at the surface being irradiated.

Quantum confined semiconductor nanoparticles included in opticalmaterials described herein can confine electrons and holes and have aphotoluminescent property to absorb light and re-emit differentwavelength light. Color characteristics of emitted light from quantumconfined semiconductor nanoparticles depend on the size of the quantumconfined semiconductor nanoparticles and the chemical composition of thequantum confined semiconductor nanoparticles.

In certain embodiments, the quantum confined semiconductor nanoparticlesinclude at least one type of quantum confined semiconductor nanoparticlewith respect to chemical composition, structure, and size. The type(s)of quantum confined semiconductor nanoparticles included in an opticalcomponent in accordance with the invention are determined by thewavelength desired for the particular end-use application in which theoptical component will be used.

As discussed herein, quantum confined semiconductor nanoparticles may ormay not include a shell and/or a ligand on a surface thereof. In certainembodiments, a shell and/or ligand can passivate quantum confinedsemiconductor nanoparticles to prevent agglomeration or aggregation toovercome the Van der Waals binding force between the nanoparticles. Incertain embodiments, the ligand can comprise a material having anaffinity for any host material in which a quantum confined semiconductornanoparticle may be included. As discussed herein, a shell can comprisean inorganic shell.

An optical material can include two or more different types of quantumconfined semiconductor nanoparticles (based on composition, structureand/or size), wherein each type is selected to obtain light having apredetermined color.

An optical material can comprise one or more different types of quantumconfined semiconductor nanoparticles (based on composition, structureand/or size), wherein each different type of quantum confinedsemiconductor nanoparticles emits light at predetermined wavelength thatis different from the predetermined wavelength emitted by at least oneof any other type of quantum confined semiconductor nanoparticlesincluded in the optical material, and wherein the one or more differentpredetermined wavelengths are selected based on the end-use application.

If use of two or more different types of quantum confined semiconductornanoparticles that emit at different predetermined wavelengths isdesired, the different types of quantum confined semiconductornanoparticles can be included in two or more different opticalmaterials.

If two or more different optical materials are used, such differentoptical materials can, for example, be included as separate layers of alayered arrangement and/or as separate features of a patterned layerthat includes features including features of more than one of theoptical materials.

An optical material described herein can comprise quantum confinedsemiconductor nanoparticles distributed in a host material.

A host material can comprises a solid host material.

Examples of a host material useful in various embodiments and aspect ofthe inventions described herein include polymers, monomers, resins,binders, glasses, metal oxides, and other nonpolymeric materials.

Preferred host materials for optical materials include polymeric andnon-polymeric materials that are at least partially transparent, andpreferably fully transparent, to preselected wavelengths of light.

Preselected wavelengths can include wavelengths of light in the visible(e.g., 400-700 nm) region of the electromagnetic spectrum.

Other examples of host materials include cross-linked polymers andsolvent-cast polymers, glass or a transparent resin. A resin such as anon-curable resin, heat-curable resin, or photocurable resin can besuitably used from the viewpoint of processability. Additional examplesof such a resin can be in the form of either an oligomer or a polymer, amelamine resin, a phenol resin, an alkyl resin, an epoxy resin, apolyurethane resin, a maleic resin, a polyamide resin, polymethylmethacrylate, polyacrylate, polycarbonate, polyvinyl alcohol,polyvinylpyrrolidone, hydroxyethylcellulose, carboxymethylcellulose,copolymers containing monomers forming these resins, and the like. Otherhost materials can be identified by persons of ordinary skill in therelevant art.

A host material can comprise a photocurable resin. A photocurable resinmay be a preferred host material, e.g., where the optical material is tobe patterned. As a photo-curable resin, a photo-polymerizable resin suchas an acrylic acid or methacrylic acid based resin containing a reactivevinyl group, a photo-crosslinkable resin which generally contains aphoto-sensitizer, such as polyvinyl cinnamate, benzophenone, or the likemay be used. A heat-curable resin may be used when a photo-sensitizer isnot used. These resins may be used individually or in combination of twoor more.

A host material can comprises a solvent-cast resin. A polymer such as apolyurethane resin, a maleic resin, a polyamide resin, polymethylmethacrylate, polyacrylate, polycarbonate, polyvinyl alcohol,polyvinylpyrrolidone, hydroxyethylcellulose, carboxymethylcellulose,copolymers containing monomers forming these resins, and the like can bedissolved in solvents known to those skilled in the art. Uponevaporation of the solvent, the resin forms a solid host material forquantum confined semiconductor nanoparticles.

As mentioned above, an optical material can comprise light scatterersand/or other additives (e.g., wetting or leveling agents).

Examples of light scatterers (also referred to herein as scatterers orlight scattering particles) that can be used in the embodiments andaspects of the inventions described herein, include, without limitation,metal or metal oxide particles, air bubbles, and glass and polymericbeads (solid or hollow). Other light scatterers can be readilyidentified by those of ordinary skill in the art. In certainembodiments, scatterers have a spherical shape. Preferred examples ofscattering particles include, but are not limited to, TiO₂, SiO₂,BaTiO₃, BaSO₄, and ZnO. Particles of other materials that arenon-reactive with the host material and that can increase the absorptionpathlength of the excitation light in the host material can be used. Incertain embodiments, light scatterers may have a high index ofrefraction (e.g., TiO₂, BaSO₄, etc) or a low index of refraction (gasbubbles).

Selection of the size and size distribution of the scatterers is readilydeterminable by those of ordinary skill in the art. The size and sizedistribution can be based upon the refractive index mismatch of thescattering particle and the host material in which it the lightscatterer is to be dispersed, and the preselected wavelength(s) to bescattered according to Rayleigh scattering theory. The surface of thescattering particle may further be treated to improve dispersability andstability in the host material. In one embodiment, the scatteringparticle comprises TiO₂ (R902+ from DuPont) of 0.2 μm particle size, ina concentration in a range from about 0.001 to about 5% by weight. Incertain preferred embodiments, the concentration range of the scatterersis between 0.1% and 2% by weight.

An optical material including quantum confined semiconductornanoparticles and a host material can be prepared, for example, from anink comprising quantum confined semiconductor nanoparticles and a liquidvehicle, wherein the liquid vehicle comprises a composition includingone or more functional groups that are capable of being cross-linked.The functional units can be cross-linked, for example, by UV treatment,thermal treatment, or another cross-linking technique readilyascertainable by a person of ordinary skill in a relevant art.

A composition including one or more functional groups that are capableof being cross-linked can be the liquid vehicle itself.

A composition including one or more functional groups that are capableof being cross-linked can be a co-solvent.

A composition including one or more functional groups that are capableof being cross-linked can be a component of a mixture with the liquidvehicle. An ink can further include light scatterers.

Quantum confined semiconductor nanoparticles (e.g., semiconductornanocrystals) can be distributed within the host material as individualparticles.

As described herein, an optical material can comprise quantum confinedsemiconductor nanoparticles dispersed in a host material.

An optical material can comprise up to about 30 weight percent quantumconfined semiconductor nanoparticles based on the weight of the hostmaterials. For example, an optical material can include from about 0.001to about 25, from about 0.001 to about 20, from about 0.001 to about 15,from about 0.001 to about 10, from about 0.001 to about 5, from about0.01 to about 4, from about 0.01 to about 3, from about 0.1 to about 3,from about 0.1 to 2, from about 0.5 to about weight percent quantumconfined semiconductor nanoparticles based on the weight of the hostmaterial. weight percent quantum confined semiconductor nanoparticlesbased on the weight of the host material.

An optical material can also comprise light scatterers.

An optical material can include an amount of light scatterers in a rangefrom 0.01 weight percent based on the weight of the optical material upto an amount that is the same as the amount of quantum confinedsemiconductor nanoparticles included in the optical material.

An optical material can include from about 0.001 to about 5 weightpercent scatterers based on the weight of the optical material.

An optical component can comprise a structural member.

A structure member can comprise a rigid material, e.g., glass,polycarbonate, acrylic, quartz, sapphire, or other known rigidmaterials.

Examples of glasses include, but are not limited to, borosilicate glass,soda-lime glass, and aluminosilicate glass. Other glasses can be readilyascertained by one of ordinary skill in the art.

Non-limiting examples of structural members are described herein.

An example of a common structural member that can be used in an opticalcomponent and/or for at least partially encapsulating an opticalmaterial is a glass substrate.

A structural member can comprise a flexible material, e.g., a polymericmaterial such as plastic (e.g. but not limited to thin acrylic, epoxy,polycarbonate, PEN, PET, PE) or silicone.

A barrier material can be a composite, consisting of multiple layers ofdifferent components, or coatings on a substrate.

A structural member can comprise a flexible material including a silicaor glass coating thereon. If flexibility is desired, the silica or glasscoating is selected to be sufficiently thin to retain the flexiblenature of the base flexible material.

A structural member can be selected to be substantially opticallytransparent to wavelengths of interest for the particular end-useapplication. For example, the structural member can be selected to be atleast 90% transparent, at least 95% transparent, at least 99%transparent.

A structural member can be selected to be optically translucent.

A structural member can be selected to be have a transmission haze (asdefined in ASTM D1003-0095) in a range from about 0.1% to about 5%.(ASTM D1003-0095 is hereby incorporated herein by reference.)

A structural member can comprise a smooth surface.

A structural member can comprise a non-smooth surface.

A structural component can comprise a substrate wherein, one or both ofthe major surfaces of the substrate is smooth.

A structural component can comprise a substrate wherein one or bothmajor surfaces of the substrate can be corrugated.

A structural component can comprise a substrate wherein one or bothmajor surfaces of the substrate can be roughened.

A structural component can comprise a substrate wherein one or bothmajor surfaces of the substrate can be textured.

A structural component can comprise a substrate wherein one or bothmajor surfaces of the substrate can be concave.

A structural component can comprise a substrate wherein one or bothmajor surfaces of the substrate can be convex.

A structural component can comprise a substrate wherein one majorsurface of the substrate can comprise microlenses.

A structural component can comprise a substrate wherein one or moresurfaces is flat, concave, convex, or featured (e.g., including one ormore positive or negative features).

A structural component can comprise other surface characteristics thatare selected to be included based on the particular end-use application.

A structural component can comprise a geometrical shape and dimensionsthat can be selected based on the particular end-use application.

A structural component can have a thickness that is substantiallyuniform.

An optical component can include at least one layer including an opticalmaterial comprising quantum confined semiconductor nanoparticles.

An optical component can include more than one type of quantum confinedsemiconductor nanoparticles.

Each type can be included in a separate optical material and each can bedisposed as a separate layer.

Each of the different types can be included in the same opticalmaterial,

An optical material can be disposed on a surface of a structural member.

An optical material can be disposed as an uninterrupted layer across asurface of a structural member.

An optical material can be disposed as a layer.

A layer comprising an optical material can have a thickness from about0.1 to about 200 microns.

A layer comprising an optical material can have a thickness from about10 to about 200 microns.

A layer comprising an optical material can have a thickness from about30 to about 80 microns.

An optical component can include other optional layers.

While further including may be undesirable for energy considerations,there may be instances in which a filter is included for other reasons.In such instances, a filter may be included. If included, a filter maycover all or at least a predetermined portion of the structural member.A filter can be included for blocking the passage of one or morepredetermined wavelengths of light. A filter layer can be included overor under the optical material.

An optical component can include multiple filter layers on varioussurfaces of structural member. A notch filter layer can optionally beincluded.

An optical component can include one or more anti-reflection coatings.

An optional component can include one or more wavelength selectivereflective coatings. Such coatings can be included, for example, toreflect light back toward the light source.

An optical component may further include outcoupling members orstructures across at least a portion of a surface thereof. For example,outcoupling members or structures may be uniformly distributed across asurface. Outcoupling members or structures may vary in shape, size,and/or frequency in order to achieve a more uniform light distributionoutcoupled from the surface. Outcoupling members or structures may bepositive, e.g., sitting or projecting above the surface of opticalcomponent, or negative, e.g., depressions in the surface of the opticalcomponent, or a combination of both.

An optical component can optionally include a lens, prismatic surface,grating, etc. on the surface thereof from which light is emitted. Othercoatings can also optionally be included on such surface.

Outcoupling members or structures can be formed, for example, bymolding, embossing, lamination, applying a curable formulation (formed,for example, by techniques including, but not limited to, spraying,lithography, printing (screen, inkjet, flexography, etc), etc.).

A structural member can include light scatterers.

A structural member can include air bubbles or air gaps.

An optical component can include one or more major, surfaces with a flator matte finish.

An optical component can include one or more surfaces with a glossfinish.

Example of barrier films or coatings include, without limitation, a hardmetal oxide coating, a thin glass layer, and Barix coating materialsavailable from Vitex Systems, Inc. Other barrier films or coating can bereadily ascertained by one of ordinary skill in the art.

As mentioned herein, one or more barrier materials can be used to fullyor partially encapsulate the optical material. A barrier material cancomprise a film. A barrier material can comprise a coating. A barriermaterial can comprise a structural member.

A seal can comprise glass frit, glass frit in a binder system, solder incombination with a metallized substrate. Other sealants can be used.Other known techniques for sealing glass-to-glass, glass-to-metal, andbarrier films or sealants together can be used.

Preferably, a seal will not partially or fully delaminate or otherwisefail during the useful lifetime of the optical component.

Barrier materials can also be sealed together by a seal materialcomprising an adhesive material that can be chosen for its opticaltransmission properties and its adhesion qualities.

Barrier materials and sealing materials preferably will not yellow ordiscolor during sealing. More preferably, barrier materials and sealingmaterials will not yellow or discolor during the useful lifetime of theoptical component so as to substantially alter the optical properties ofthe optical material or optical component.

Preferably a sealing material has oxygen barrier properties.

A sealing material can also have moisture barrier properties.

Sealing materials can preferably be hardened (e.g., cured or dried)under conditions that are not detrimental to an optical material and theexternal quantum efficiency of an optical material. Examples include,but are not limited to, sealants such as an adhesive material can be UVcured, e.g., UV curable acrylic urethanes, such as products sold byNorland Adhesives called Norland 68 and Norland 68 T.

An optical component can further include a cover, coating or layer forprotection from the environment (e.g., dust, moisture, and the like)and/or scratching or abrasion.

In certain aspects and embodiments of the inventions taught herein, theoptical material (e.g., comprising quantum confined semiconductornanoparticles dispersed in a host material (preferably a polymer orglass)) can be exposed to light flux for a period of time sufficient toincrease the solid state photoluminescent efficiency of the opticalmaterial. In certain embodiments, the optical material can be exposed tolight and heat for a period of time sufficient to increase the solidstate photoluminescent efficiency of the optical material. In certainembodiments, the exposure to light or light and heat can be continuedfor a period of time until the solid state photoluminescent efficiencyreaches a substantially constant value.

In certain embodiments, a light source that emits light with awavelength in a range from about 365 to about 480 nm can be used as thesource of light. In certain embodiments, a light source that emits lightwith a wavelength in a range from about 365 to about 470 nm can be usedas the source of light.

In certain embodiments, a light source can comprise an LED light sourcewith peak wavelength in a range from about 365 nm to about 480 nm. Incertain embodiments, a light source can comprise a fluorescent lamp thatemits light with a wavelength in a range from about 365 nm to about 480nm.

In certain embodiments, a light source can comprise an LED light sourcewith peak wavelength in a range from about 365 nm to about 470 nm. Incertain embodiments, a light source can comprise a fluorescent lamp thatemits light with a wavelength in a range from about 365 nm to about 470nm.

In certain embodiments, the optical material can be irradiated by alight source with peak wavelength in a range from about 450 nm to about470 nm. In certain embodiments, an LED light source with peak wavelengtha range from about 450 nm to about 470 nm can be used as the source oflight.

Other known light sources can be readily identified by the skilledartisan.

In certain embodiments, the light flux can be from about 10 to about 100mW/cm², preferably from about 20 to about 35 mW/cm², and more preferablyfrom about 20 to about 30 mW/cm². In embodiments that include exposingthe optical material to light and heat, the optical material can beexposed to light while at a temperature in a range from about 25° toabout 80° C.

In certain embodiments, the optical material (e.g., comprising quantumconfined semiconductor nanoparticles dispersed in a host material(preferably a polymer or glass)) can be encapsulated (for example, alayer of optical material can be disposed between glass plates) whenexposed to light, whether or not heat is also applied. In certainexamples, the glass plates can further be sealed together around theperimeter or edge. In certain embodiments, the seal can comprise barriermaterial. In certain embodiments, the seal can comprise an oxygenbarrier. In certain embodiments, the seal can comprise a water barrier.In certain embodiments, the seal can comprise an oxygen and waterbarrier. In certain embodiments, the seal can be substantiallyimpervious to water and/or oxygen. Examples of sealing techniquesinclude, but are not limited to, glass-to-glass seal, glass-to-metalseal, sealing materials that are substantially impervious to oxygenand/or water, epoxies and other sealing materials that slow downpenetration of oxygen and/or moisture. In certain embodiments, theoptical material (e.g., comprising quantum confined semiconductornanoparticles dispersed in a host material (preferably a polymer orglass)) can be partially encapsulated when exposed to light, whether ornot heat is also applied.

Solid state photoluminescent efficiency can be measured, for example,with use of a spectrophotometer in an integrating sphere including aNIST traceable calibrated light source.

Solid state external quantum efficiency (also referred to herein as“EQE” or “solid state photoluminescent efficiency is measured in a 12”integrating sphere using a NIST traceable calibrated light source, usingthe method developed by Mello et al., Advanced Materials 9(3):230(1997), which is hereby incorporated by reference. The method uses acollimated 450 nm LED source, an integrating sphere and a spectrometer.Three measurements are taken. First, the LED directly illuminates theintegrating sphere giving a spectrum labeled L1 and shown in FIG. 2(which graphically represents emission intensity (a.u.) as a function ofwavelength (nm)) for purposes of example in describing this method.Next, the PL sample is placed into the integrating sphere so that onlydiffuse LED light illuminates the sample giving the (L2+P2) spectrumshown for purposes of example in FIG. 2. Finally, the PL sample isplaced into the integrating sphere so that the LED directly illuminatesthe sample (just off normal incidence) giving the (L3+P3) spectrum shownfor purposes of example 4. After collecting the data, each spectralcontribution (L's and P's) is computed. L1, L2 and L3 correspond to thesums of the LED spectra for each measurement and P2 and P3 are the sumsassociated with the PL spectra for 2nd and 3rd measurements. Thefollowing equation then gives the external PL quantum efficiency:

EQE=[(P3·L2)minus(P2·L3)]/(L1·(L2 minus L3))

In certain embodiments, the optical material can further include lightscattering particles and other optional additives described herein.

The present invention will be further clarified by the followingexamples, which are intended to be exemplary of the present invention.

EXAMPLES Example 1 Preparation of Semiconductor Nanocrystals

A. Preparation of Semiconductor Nanocrystals Capable of Emitting 588 nmLight with 3,5-di-tert-butyl-4-hydroxybenzylphosphonic acid

Synthesis of CdSe Cores: 1.75 mmol cadmium acetate is dissolved in 15.7mmol of tri-n-octylphosphine at 140° C. in a 20 mL vial and then driedand degassed for one hour. 31.0 mmol of trioctylphosphine oxide and 4mmol of octadecylphosphonic acid are added to a 3-neck flask and driedand degassed at 110° C. for one hour. After degassing, the Cd solutionis added to the oxide/acid flask and the mixture is heated to 270° C.under nitrogen. Once the temperature reaches 270° C., 16 mmol oftri-n-butylphosphine is injected into the flask. The temperature isbrought back to 270° C. where 2.3 mL of 1.5 M TBP-Se is then rapidlyinjected. The reaction mixture is heated at 270° C. for 30 seconds andthen the heating mantle is removed from the reaction flask allowing thesolution to cool to room temperature. The CdSe cores are precipitatedout of the growth solution inside a nitrogen atmosphere glovebox byadding a 3:1 mixture of methanol and isopropanol. The isolated cores arethen dissolved in hexane and used to make core-shell materials.(Abs/Emission/FWHM (nm)=518/529/26.5). Synthesis of CdSe/CdZnSCore-Shell Nanocrystals: Two identical reactions are set up whereby25.86 mmol of trioctylphosphine oxide and 2.4 mmol of3,5-di-tert-butyl-4-hydroxybenzylphosphonic acid are loaded into 50 mLfour-neck round bottom flasks. The mixtures are then dried and degassedin the reaction vessels by heating to 120° C. for about an hour. Theflasks are then cooled to 70° C. and the hexane solution containingisolated CdSe cores from above (0.062 mmol Cd content) are added to therespective reaction mixture. The hexane is removed under reducedpressure. Dimethyl cadmium, diethyl zinc, and hexamethyldisilathiane areused as the Cd, Zn, and S precursors, respectively. The Cd and Zn aremixed in equimolar ratios while the S was in two-fold excess relative tothe Cd and Zn. Two sets of Cd/Zn (0.31 mmol of dimethylcadmium anddiethylzinc) and S (1.24 mmol of hexamethyldisilathiane) samples areeach dissolved in 4 mL of trioctylphosphine inside a nitrogen atmosphereglove box. Once the precursor solutions are prepared, the reactionflasks are heated to 155° C. under nitrogen. The Cd/Zn and S precursorsolutions are added dropwise to the respective reaction flasks over thecourse of 2 hours at 155° C. using a syringe pump. After the shellgrowth, the nanocrystals are transferred to a nitrogen atmosphereglovebox and precipitated out of the growth solution by adding a 3:1mixture of methanol and isopropanol. The isolated core-shellnanocrystals are then dispersed in toluene and the solutions from thetwo batches are combined

B. Preparation of Semiconductor Nanocrystals Capable of Emitting 632 nmLight with 3,5-di-tert-butyl-4-hydroxybenzylphosphonic acid

Synthesis of CdSe Cores: 29.9 mmol cadmium acetate is dissolved in 436.7mmol of tri-n-octylphosphine at 140° C. in a 250 mL 3-neck round-bottomschlenk flask and then dried and degassed for one hour. 465.5 mmol oftrioctylphosphine oxide and 61.0 mmol of octadecylphosphonic acid areadded to a 0.5 L glass reactor and dried and degassed at 120° C. for onehour. After degassing, the Cd solution is added to the reactorcontaining the oxide/acid and the mixture is heated to 270° C. undernitrogen. Once the temperature reaches 270° C., 243.2 mmol oftri-n-butylphosphine is injected into the flask. The temperature isbrought back to 270° C. where 33.3 mL of 1.5 M TBP-Se is then rapidlyinjected. The reaction mixture is heated at 270° C. for ˜9 minutes atwhich point the heating mantle is removed from the reaction flask andthe mixture is allowed to cool to room temperature. The CdSe cores areprecipitated out of the growth solution inside a nitrogen atmosphereglovebox by adding a 3:1 mixture of methanol and isopropanol. Theisolated cores are then dissolved in hexane and used to make core-shellmaterials. (Abs/Emission/FWHM (nm)=571/592/45)

Synthesis of CdSe/CdZnS Core-Shell Nanocrystals: Three identicalreactions are conducted whereby 517.3 mmol of trioctylphosphine oxideand 48.3 mmol of 3,5-di-tert-butyl-4-hydroxybenzylphosphonic acid areloaded into a 0.5 L glass reactor. The mixtures are then dried anddegassed in the reactor by heating to 120° C. for about an hour. Thereactors are then cooled to 70° C. and hexane solutions containing theisolated CdSe cores from above (1.95 mmol Cd content) are added to therespective reaction mixtures. The hexane is removed under reducedpressure. Dimethyl cadmium, diethyl zinc, and hexamethyldisilathiane areused as the Cd, Zn, and S precursors, respectively. The Cd and Zn aremixed in equimolar ratios while the S was in two-fold excess relative tothe Cd and Zn. Two sets of Cd/Zn (5.5 mmol of dimethylcadmium anddiethylzinc) and S (22 mmol of hexamethyldisilathiane) samples are eachdissolved in 80 mL of trioctylphosphine inside a nitrogen atmosphereglove box. Once the precursor solutions are prepared, the reactionflasks are heated to 155° C. under nitrogen. The precursor solutions areadded dropwise the respective reactor solutions over the course of 2hours at 155° C. using a syringe pump. After the shell growth, thenanocrystals are transferred to a nitrogen atmosphere glovebox andprecipitated out of the growth solution by adding a 3:1 mixture ofmethanol and isopropanol. The resulting precipitates are then dispersedin hexane and precipitated out of solution for a second time by adding a3:1 mixture of methanol and isopropanol. The isolated core-shellnanocrystals are then dissolved in chloroform and the solutions from thethree batches are mixed. (Abs/Emission/FWHM (nm)=610/632/40)

Example 2 Preparation of Optical Component Including Two Different Typesof Semiconductor Nanocrystals:

The following film is prepared using optical material includingsemiconductor nanocrystals (prepared substantially in accordance withthe synthesis described in Example 1).

A. Optical Material Including Semiconductor Nanocrystals with a PeakEmission in the Orange Spectral Region:

The semiconductor nanocrystals prepared substantially in accordance withthe synthesis described in Example 1A comprise orange-emittingsemiconductor nanocrystals dispersed in Fluorobenzene have a peakemission at 588 nm, a FWHM of about 28 nm, a solution quantum yield of83% and a concentration of 20 mg/ml.

2.7 ml of the 20 mg/ml suspension of the red-emitting nanocrystals isadded from a 3 mL syringe to a 20 ml septum capped vial including amagnetic stirrer bar, the system is closed and purged through a syringeneedle under vacuum then backfilled with nitrogen. Approximately 90percent of the solvent is removed from the vial by vacuum stripping. 0.5ml of RD-12, a low viscosity reactive diluent commercially availablefrom Radcure Corp, 9 Audrey Pl, Fairfield, N.J. 07004-3401 is added.Remaining solvent is removed from the vial by vacuum stripping. 2.0 mlof DR-150 is then added to the vial through a syringe and the mixture ismixed using a Vortex mixer. (DR-150 is a UV-curable acrylic formulationcommercially available from Radcure.). The mixture is then placed in anultrasonic bath for approximately 15 minutes.

0.028 gram TiO₂ (Ti-Pure 902+ available from DuPont) is next added tothe open vial and the mixture is mixed with a Vortex mixer followed bymixing with an homogenizer.

The vial is then capped and deaerated under vacuum and backfilled withnitrogen.

After mixing, the closed vial is put in an ultrasonic bath for 50minutes. Care is taken to avoid temperatures over 40° C. while thesample is in the ultrasonic bath.

The sample is stored in the dark until used to make a combinedformulation with long wavelength semiconductor and additional matrixmaterial.

B. Optical Material Including Semiconductor Nanocrystals with a PeakEmission in the Red Spectral Region

The semiconductor nanocrystals prepared substantially in accordance withthe synthesis described in Example 1B comprise red-emittingsemiconductor nanocrystals dispersed in Chloroform and have a peakemission at 632 nm, a FWHM of about 40 nm, a solution quantum yield of60% and a concentration of 56.7 mg/ml.

99 ml of the 56.7 mg/ml suspension of the red-emitting nanocrystals isadded to a septum capped Erlenmeyer flask including a magnetic stirrerbar, the system is closed and purged through a syringe needle undervacuum then backfilled with nitrogen. Approximately 95 percent of thesolvent is removed from the vial by vacuum stripping. 46.6 ml of RD-12,a low viscosity reactive diluent commercially available from RadcureCorp, 9 Audrey Pl, Fairfield, N.J. 07004-3401 is added. Remainingsolvent is removed from the vial by vacuum stripping. 187 ml of DR-150is then added to the vial through a syringe and the mixture is mixedusing a Vortex mixer. (DR-150 is a UV-curable acrylic formulationcommercially available from Radcure.). The mixture is then placed in anultrasonic bath for approximately 50 minutes.

Approximately 2.6 gram TiO₂ (Ti-Pure 902+ available from DuPont) is nextadded to the open vial as well as 12.9 grams of Esacure TPO previouslyground to reduce particle size in a ball mill machine and the mixture ismixed with a Vortex mixer followed by mixing with an homogenizer.

The vial is then capped and deaerated under vacuum and backfilled withnitrogen.

After mixing, the closed vial is put in an ultrasonic bath for 60minutes. Care is taken to avoid temperatures over 40° C. while thesample is in the ultrasonic bath. The sample is stored in the dark untilused to make a combined formulation with long wavelength semiconductorand additional matrix material.

C. Preparation of Host Material Including Spacer Beads:

0.9 ml of RD-12, a low viscosity reactive diluent commercially availablefrom Radcure Corp, 9 Audrey Pl, Fairfield, N.J. 07004-3401 and 3.8 ml ofDR-150, also available from Radcure Corp, is added to a 40 ml vial andthe mixture is mixed using a Vortex mixer. The mixture is then placed inan ultrasonic bath for approximately 30 minutes.

Approximately 0.05 gram TiO₂ (Ti-Pure 902+ available from DuPont) isnext added to the open vial as well as 0.05 grams of GL0179B6/45 spacebeads available from MO-SCI Specialty Products, Rolla, Mo. 65401 USA,and then mixed using a Vortex mixer.

After mixing, the closed vial is put in an ultrasonic bath forapproximately 50 minutes. Care is taken to avoid temperatures over 40°C. while the sample is in the ultrasonic bath. The sample is stored inthe dark until used to make a combined formulation with long wavelengthsemiconductor and additional matrix material.

D. Preparation of Optical Material & Layer Including Red and OrangeEmitting Semiconductor Nanocrystals:

An optical material is formed by adding together in a 20 ml vial, 2.52grams of the host material including spacer beads (preparedsubstantially in accordance with the procedure described in Example 1C),0.99 grams of the optical material of Example 1B and 1.00 grams of theoptical material of Example 1A. The mixture was stirred using a Vortexmixer followed by sonification in an ultrasonic bath for approximately50 minutes.

Sample material from the combination vial is dispensed onto a Hexagonshaped flat Borosilicate glass which was previously cleaned using acaustic base bath, acid rinse, deionized water rinse, and a methanolwipe. A second Hexagon plate of the same size also previously cleaned isplaced on top of the dispensed sample material and the sandwichedstructure is massaged to spread the formulation evenly between the twoglass plates. Excess formulation which squeezed out of the structure iswiped off of the outer portion of the glass and the Hexagon sandwich iscured in a 5000-EC UV Light Curing Flood Lamp from DYMAX Corporationsystem with an H-bulb (30-45 milliWatts/cm²) for 10 seconds. Thethickness of the nanocrystal containing layer is approximately 70-79 μm(approximately 360 mg of formulation).

The Hexagon sandwich consisting of two Hexagon shaped flat plates ofBorosilicate glass with cured layer of acrylic containing a sample ofthe optical material prepared substantially as described in Example 6.

Six samples (Samples A-F) were prepared substantially as described inExample 2. Initial CCT, CRI, and External Quantum Efficiencymeasurements were taken for each sample prior to heating each sample toapproximately 50° C. and irradiating the sample to approximately 30mW/cm2 of 450 nm blue light for the time specified in following Table 1for each of the samples. CCT, CRI, and EQE measurements were taken afterthe irradiation time listed for the respective sample. The data is setforth in the following Table 1.

TABLE 1 Irradiation at 50° C. @ 30 mW/cm2 Initial Initial Final FinalSample CCT Initial EQE Irradiation CCT Final EQE Label (K) CRI (%) Time,Hrs (K) CRI (%) A 2649 86.5 62  1 2482 87.1 78 B 2664 85.6 — 13 2519 8782 C 2609 85.6 65  2 2444 87.1 77 D 2641 85.4 62   10 * 2472 87.2 80 E2659 85.2 63 11 2480 87.3 80 F 2684 84.5 60 11 2446 87.3 80 * 2 hrs 50C. @ 30 mW/cm2 450 nm, 8 hrs 50 C. @ 15 mW/cm2 450 nm

Example 3 Preparation of Semiconductor Nanocrystals

A. Preparation of Semiconductor Nanocrystals Capable of Emitting RedLight with 3,5-di-tert-butyl-4-hydroxybenzylphosphonic acid

Synthesis of CdSe Cores: 26.25 mmol cadmium acetate is dissolved in235.4 mmol of tri-n-octylphosphine at 100° C. in a 250 mL 3-neckround-bottom flask and then dried and degassed for one hour. 465.5 mmolof trioctylphosphine oxide and 59.9 mmol of octadecylphosphonic acid areadded to a 0.5 L glass reactor and dried and degassed at 140° C. for onehour. After degassing, the Cd solution is added to the reactorcontaining the oxide/acid and the mixture is heated to 270° C. undernitrogen. Once the temperature reaches 270° C., 240 mmol oftri-n-butylphosphine is injected into the flask. The temperature of themixture is then raised to 308° C. where 60 mL of 1.5 M TBP-Se is thenrapidly injected. The reaction mixture temperature drops to 284° C. for30 seconds and then the heating mantle is removed from the reactionflask and the apparatus is cooled via two air guns. The first absorptionpeak of the nanocrystals is 551 nm. The CdSe cores are precipitated outof the growth solution inside a nitrogen atmosphere glovebox by adding a3:1 mixture of methanol and isopropanol. The isolated cores are thendissolved in hexane and used to make core-shell materials. Synthesis ofCdSe/CdZnS Core-Shell Nanocrystals: 517.3 mmol of trioctylphosphineoxide and 48.3 mmol of 3,5-di-tert-butyl-4-hydroxybenzylphosphonic acidare loaded into a 0.5 L glass reactor. The mixture is then dried anddegassed in the reactor by heating to 120° C. for about an hour. Thereactor is then cooled to 70° C. and the hexane solution containingisolated CdSe cores (1.98 mmol Cd content) is added to the reactionmixture. The hexane is removed under reduced pressure. Dimethyl cadmium,diethyl zinc, and hexamethyldisilathiane are used as the Cd, Zn, and Sprecursors, respectively. The Cd and Zn are mixed in equimolar ratioswhile the S is in two-fold excess relative to the Cd and Zn. The Cd/Zn(6.13 mmol of dimethylcadmium and diethylzinc) and S (24.53 mmol ofhexamethyldisilathiane) samples are each dissolved in 80 mL oftrioctylphosphine inside a nitrogen atmosphere glove box. Once theprecursor solutions are prepared, the reaction flask is heated to 155°C. under nitrogen. The precursor solutions are added dropwise over thecourse of 2 hours at 155° C. using a syringe pump. After the shellgrowth, the nanocrystals are transferred to a nitrogen atmosphereglovebox and precipitated out of the growth solution by adding a 3:1mixture of methanol and isopropanol. The isolated core-shellnanocrystals are then dissolved in toluene and used to make opticalmaterials. The material specifications are as follows: Abs=591 nm;Emission=603 nm; FWHM=30 nm; QY=85% in Toluene.

Example 4 Preparation of Optical Component

A. Optical Material Including Semiconductor Nanocrystals with a PeakEmission in the Red Spectral Region:

The Semiconductor nanocrystals prepared substantially in accordance withthe synthesis described in Example 3 comprise red-emitting semiconductornanocrystals dispersed in Toluene have a (add space) peak emission at604 nm, a FWHM of about 29 nm, a solution quantum yield of 85% and aconcentration of 18 mg/ml.

30.6 ml of the 18 mg/ml suspension of the red-emitting nanocrystals intoluene is added from a 10 mL syringe to a 125 ml septum cappedErlenmeyer flask including a magnetic stirrer bar; the system is closedand purged through a syringe needle under vacuum then backfilled withnitrogen multiple times prior to insertion of the suspension.Approximately 95 percent of the solvent is removed from the Erlenmeyerflask by vacuum stripping while stirring the solution with a magneticstirrer bar 10 ml of RD-12, a low viscosity reactive diluentcommercially available from Radcure Corp, 9 Audrey Pl, Fairfield, N.J.07004-3401 is added to the Erlenmeyer flask through a syringe Remainingsolvent is removed from the Erlenmeyer flask by vacuum stripping whilestirring with the magnetic stirrer bar. The Erlenmeyer flask is thenplaced in an ultrasonic bath for approximately 15 minutes. 40 ml ofDR-150 is then added to the Erlenmeyer flask through a syringe while thesolution is mixed using the magnetic stir bar. Following the addition,the solution is further mixed using a Vortex mixer. (DR-150 is aUV-curable acrylic formulation commercially available from Radcure.).

0.270 gram TiO₂ (Ti-Pure 902+ available from DuPont) is next added tothe open Erlenmeyer flask and the mixture is mixed with a Vortex mixerfollowed by mixing with an homogenizer. Approximately 0.2 grams of Tego2500 is added dropwise and the solution mixed with a Vortex mixerfollowed by an additional 45 minutes in the ultrasonic bath. Care istaken to avoid temperatures over 40° C. while the sample is in theultrasonic bath.

The sample is stored in the dark until used to make an opticalcomponent.

B. Optical Component Comprising Glass/Optical Material/Glass

Microscope slides are pre-cleaned using acetone followed by a methanolwipe. Two 80 micron shims are positioned at the corners of one end ofthe microscope slide and approximately one inch from that end. A smallamount of Formulation described in example 4A is placed in the center ofthe area framed by the shims. A second microscope slide or piece ofmicroscope slide is placed on top of the formulation, positioned suchthat the edges contact portions of the spacing shims. Small mini binderclips are positioned over the shims to hold the two pieces of glasstogether, care is taken to avoid shading the formulation with the clips.This structure is cured in a 5000-EC UV Light Curing Flood Lamp fromDYMAX Corporation system with an H-bulb (30-45 mW/cm²) for 10 seconds oneach side. The clips are removed and the shim stock pulled out of thestructure.

The samples are then irradiated by a 450 nm light flux of approximately25 mW/cm2 at 50 C for the time indicated in Table 2. EQE measurementsare made in a 12″ integrating sphere using a NIST traceable calibratedlight source.

Measurement for un-encapsulated samples are shown in Table 2 as Samples1 and 2.

C. Optical Component Comprising Glass/Optical Material/Acrylate/Glass

Optical components can also be made sequentially. As an example, theoptical material described in example 4A is coated onto a pre-cleanedmicroscope slide using a Mayer rod 52 yielding approximately 80 um film.This film is cured in an air environment using a 5000-EC UV Light CuringFlood Lamp from DYMAX Corporation system with an H-bulb such that thesample is exposed to energy of approximately 865 mJ/cm2.

Formation of a sealant layer over of the optical material and firstsubstrate is effected by dispensing a sufficient quantity of a UV cureliquid acrylate based material on the cured optical material film suchthat when a mating glass slide is positioned on top of the structure,the acrylate based liquid covers the majority of the optical materialfilm and preferably beads-up on the edge of the slides. The acrylatebased liquid contained between the top microscope slide and the basemicroscope slide containing the cured optical component film is thencured in an air environment using a 5000-EC UV Light Curing Flood Lampfrom DYMAX Corporation system with an H-bulb such that the sample isexposed to energy of approximately 865 mJ/cm2.

External Quantum Efficiency (EQE) is measured on the samples formed in a12″ integrating sphere using a NIST traceable calibrated light source.The samples are then irradiated by a 450 nm light flux of approximately25 mW/cm2 at 50° C. for the time indicated in Table 2. Post irradiationEQE measurements are made using the same technique.

Measurement for encapsulated samples are shown in Table 2 as Samples 3,4, and 5.

TABLE 2 Post- Initial Irradiation Irradiation Sample Encapsulant EQETime EQE 1 None 67 12 hours 93 2 None 69 12 hours 92 3 Acrylate 65 13hours 91 4 Acrylate 66 13 hours 92 5 Acrylate 65 13 hours 92

Example 5 A: Preparation of Optical Material Ink

Semiconductor nanocrystals having a peak emission at 611 nm, a FWHM ofabout 33 nm, a solution quantum yield of 71% were used. Thesemiconductor nanocrystals used were a mixture of semiconductornanocrystals from 4 separately prepared batches. (Two of the batcheswere prepared generally following the procedure described in Example 3A;the other two were prepared using the same general procedure, but on alarger scale.) The nanocrystals were dispersed in toluene at aconcentration of 20 mg/ml.

367.5 ml of the 20 mg/ml suspension of the red-emitting nanocrystals iscontained in a 1 liter round bottom flask, and approximately 90 percentof the solvent is removed from the vial by vacuum stripping. 106.7 ml ofRD-12, a low viscosity reactive diluent commercially available fromRadcure Corp. 9 Audrey Pl, Fairfield, N.J. 07004-3401 is added.Remaining solvent is removed from the vial by vacuum stripping. Theresulting solution is sonicated in an ultrasonic bath for 20 minutesbefore 427.5 ml of DR-150 is added to the flask and the mixture issonicated for 20 minutes in an ultrasonic bath. (DR-150 is a UV-curableacrylic formulation commercially available from Radcure.).

4.63 grams of Tego RAD2500 surfactant is added to the open flask,followed by the addition of 0.1.97 grams TiO₂ (Ti-Pure 902+ availablefrom DuPont) and the mixture is mixed with a rotor stator homogenizer (aproduct of IKA Labor Technik, model Ultra-Turrax T-25).

The flask containing the mixture is then put in an ultrasonic bath for20 minutes. Care is taken to avoid temperatures over 40° C. while thesample is in the ultrasonic bath.

The sample was stored in the dark until used for the following process.

B. Preparation of Optical Component:

An optical component was prepared by screen-printing approx. a film ofoptical material ink prepared substantially as described in Example 5A(above) onto each of two separate pre-cleaned glass plates. The ink isprinted in air. After the ink is printed, the ink on the two plates iscured by exposure to 2 Dymax Fusion H-bulbs at about 50 milliwatts/cm²for about 30 seconds. The weight of cured ink film on each plate isapprox. 0.2269 gram. The curing step is carried out under a blanket ofnitrogen. After curing, the plates are returned to air. Next, an amountof optically clear adhesive material is dispensed upon the cured opticalmaterial on one of the two plates. The clear adhesive used is a UVcurable acrylic urethane product sold by Norland Adhesives calledNorland 68 T. (This adhesive material is optically transparent and hasoxygen barrier properties). The second plate including cured ink isbrought down in a controlled fashion to touch the top of the dispensedadhesive material. The second printed plate is then slowly pusheddownwards (with the ink side facing the adhesive) while maintainingparallelism to the bottom glass plate. This compressive force is appliedusing an electromechanical universal testing machine (ADMET eXpert7601). The compressive force is substantially uniform across the platesandwich. The compressive force used is about 60 lbf. The force is heldfor about one minute before the force is removed. (The printed opticalmaterial is now fully encapsulated, being surrounded by the adhesivematerial on three sides, and by glass on the fourth side.) Thecompressed plate sandwich is then placed under a UV light source usingtwo D Bulbs at about 140 mW/cm2 for approx. 50 sec. to cure theadhesive. The curing step is carried out in air.

Following the adhesive curing step, resulting optical component isplaced on a hot plate at a temperature of 60° C. to uniformly heat theoptical component while simultaneously exposing the surfaces of theoptical component to uniform light flux of 40-50 mW/cm² and a 450 nmpeak wavelength for 6 hours. (Light flux is measured using a OPHIR NOVAlaser power meter.)

The solid state EQE was measured for the optical component aftercompletion of the light flux and heat exposure step. The opticalcomponent was then placed in bubble wrap and stored in a clear plasticbox at room temperature in a room lighted by commercial room fluorescentlighting conditions. After being so stored for about 78 days, theoptical component was removed from its storage conditions and solidstate measurements were taken. The measurements for the opticalcomponent initially and after being stored for about 78 days are setforth below in Table 3:

TABLE 3 Day # Solid State EQE Absorption 0 75% 69% About 78 78% 69%

Quantum confined semiconductor nanoparticles can confine electrons andholes and have a photoluminescent property to absorb light and re-emitdifferent wavelength light. Color characteristics of emitted light fromquantum confined semiconductor nanoparticles depend on the size of thequantum confined semiconductor nanoparticles and the chemicalcomposition of the quantum confined semiconductor nanoparticles.

The type(s) of quantum confined semiconductor nanoparticles included inan optical material or optical component in accordance with the presentinvention can be determined by the wavelength of light to be convertedand the wavelengths of the desired light output. As discussed herein,quantum confined semiconductor nanoparticles may or may not include ashell and/or a ligand on a surface thereof. A shell and/or ligand canpassivate quantum confined semiconductor nanoparticles to preventagglomeration or aggregation to overcome the Van der Waals binding forcebetween the nanoparticles.

The size and composition of quantum confined semiconductor nanoparticles(including, e.g., semiconductor nanocrystals) useful in the variousaspects and embodiments of the inventions can be selected such thatsemiconductor nanocrystals emit photons at a predetermined wavelength ofwavelength band in the far-visible, visible, infra-red or other desiredportion of the spectrum. For example, the wavelength can be between 300and 2,500 nm or greater, such as between 300 and 400 nm, between 400 and700 nm, between 700 and 1100 nm, between 1100 and 2500 nm, or greaterthan 2500 nm.

Quantum confined semiconductor nanoparticles (including, e.g.,semiconductor nanocrystals) are nanometer-scale inorganic semiconductornanoparticles. Semiconductor nanocrystals include, for example,inorganic crystallites between about 1 nm and about 1000 nm in diameter,preferably between about 2 nm and about 50 um, more preferably about 1nm to about 20 nm (such as about 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16,17, 18, 19, or 20 nm).

Because semiconductor nanocrystals have narrow emission linewidths, arephotoluminescent efficient, and emission wavelength tunable with thesize and/or composition of the nanocrystals, they are preferred quantumconfined semiconductor nanoparticles for use in the various aspects andembodiments of the inventions described herein.

Semiconductor nanocrystals included in various aspect and embodiments ofthe inventions most preferably have an average nanocrystal diameter lessthan about 150 Angstroms ({acute over (Å)}). In certain embodiments,semiconductor nanocrystals having an average nanocrystal diameter in arange from about 12 to about 150 {acute over (Å)} can be particularlydesirable.

However, depending upon the composition and desired emission wavelengthof the semiconductor nanocrystal, the average diameter may be outside ofthese various preferred size ranges.

Semiconductor materials that can form a nanoparticles and nanocrystalsfor use in the various aspects and embodiments of the inventionsdescribed herein can comprise Group IV elements, Group II-VI compounds,Group II-V compounds, Group III-VI compounds, Group III-V compounds,Group IV-VI compounds, Group compounds, Group II-IV-VI compounds, orGroup II-IV-V compounds, for example, CdS, CdO, CdSe, CdTe, ZnS, ZnO,ZnSe, ZnTe, MgTe, GaAs, GaP, GaSb, GaN, HgS, HgO, HgSe, HgTe, InAs, InP,InSb, InN, AlAs, AlP, AlSb, AIS, PbS, PbO, PbSe, Ge, Si, alloys thereof,and/or mixtures thereof, including ternary and quaternary mixturesand/or alloys.

Examples of the shape of the nanoparticles and nanocrystals includesphere, rod, disk, other shape or mixtures thereof.

In certain preferred aspects and embodiments of the inventions, quantumconfined semiconductor nanoparticles (including, e.g., semiconductornanocrystals) include a “core” of one or more first semiconductormaterials, which may include an overcoating or “shell” of a secondsemiconductor material on at least a portion of a surface of the core.In certain embodiments, the shell surrounds the core. A quantum confinedsemiconductor nanoparticle (including, e.g., semiconductor nanocrystal)core including a shell on at least a portion of a surface of the core isalso referred to as a “core/shell” semiconductor nanocrystal.

For example, a quantum confined semiconductor nanoparticle (including,e.g., semiconductor nanocrystal) can include a core comprising a GroupIV element or a compound represented by the formula MX, where M iscadmium, zinc, magnesium, mercury, aluminum, gallium, indium, thallium,or mixtures thereof, and X is oxygen, sulfur, selenium, tellurium,nitrogen, phosphorus, arsenic, antimony, or mixtures thereof. Examplesof materials suitable for use as a core include, but are not limited to,CdS, CdO, CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe, MgTe, GaAs, GaP, GaSb, GaN,HgS, HgO, HgSe, HgTe, InAs, InP, InSb, InN, AlAs, AlP, AlSb, AIS, PbS,PbO, PbSe, Ge, Si, alloys thereof, and/or mixtures thereof, includingternary and quaternary mixtures and/or alloys. Examples of materialssuitable for use as a shell include, but are not limited to, CdS, CdO,CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe, MgTe, GaAs, GaP, GaSb, GaN, HgS, HgO,HgSe, HgTe, InAs, InP, InSb, InN, AlAs, AlP, AlSb, AIS, PbS, PbO, PbSe,Ge, Si, alloys thereof, and/or mixtures thereof, including ternary andquaternary mixtures and/or alloys.

The surrounding “shell” material can be selected to have a bandgapgreater than the bandgap of the core material and can be chosen so as tohave an atomic spacing close to that of the “core” substrate.

The surrounding shell material can be selected to have a bandgap lessthan the bandgap of the core material.

The shell and core materials can have the same crystal structure.

Shell materials are discussed further below.

Quantum confined semiconductor nanoparticles can be members of apopulation of semiconductor nanoparticles having a narrow sizedistribution.

Quantum confined semiconductor nanoparticles (including, e.g.,semiconductor nanocrystals) can comprise a monodisperse or substantiallymonodisperse population of nanoparticles.

Quantum confined semiconductor nanoparticles can show strong quantumconfinement effects that can be harnessed in designing bottom-upchemical approaches to create optical properties that are tunable withthe size and composition of the nanoparticles.

An example of a methods for the preparation and manipulation ofsemiconductor nanocrystals are described in Murray et al. (J. Am. Chem.Soc., 115:8706 (1993)); in the thesis of Christopher Murray, “Synthesisand Characterization of II-VI Quantum Dots and Their Assembly into 3-DQuantum Dot Superlattices”, Massachusetts Institute of Technology,September, 1995; and in U.S. patent application Ser. No. 08/969,302entitled “Highly Luminescent Color-selective Materials” which are herebyincorporated herein by reference in their entireties. Other examples ofthe preparation and manipulation of semiconductor nanocrystals aredescribed in U.S. Pat. Nos. 6,322,901 and 6,576,291, and U.S. PatentApplication No. 60/550,314, each of which is hereby incorporated hereinby reference in its entirety.

Quantum confined semiconductor nanoparticles (including, but not limitedto, semiconductor nanocrystals) can typically include ligands attachedto an outer surface.

Ligands can be derived from a coordinating solvent that can be used tohelp control the growth process. A coordinating solvent is a compoundhaving a donor lone pair that, for example, has a lone electron pairavailable to coordinate to a surface of the growing nanocrystal. Solventcoordination can stabilize the growing nanocrystal.

A nanoparticle surface that includes ligands derived from the growthprocess can be modified by repeated exposure to an excess of a competingligand group (including, e.g., but not limited to, coordinating group)to form an overlayer. For example, a dispersion of the capped quantumconfined semiconductor nanoparticles (including, e.g., semiconductornanocrystals) can be treated with a coordinating organic compound, suchas pyridine, to produce crystallites which disperse readily in pyridine,methanol, and aromatics but no longer disperse in aliphatic solvents.Such a surface exchange process can be carried out with any compoundcapable of coordinating to or bonding with the outer surface of thenanoparticle, including, for example, but not limited to, phosphines,thiols, amines and phosphates.

For example, a nanocrystal or other nanoparticle can be exposed to shortchain polymers which exhibit an affinity for the surface and whichterminate in a moiety having an affinity for a suspension or dispersionmedium. Such affinity improves the stability of the suspension anddiscourages flocculation of the nanoparticle.

For example, a coordinating ligand can have the formula:

(Y—)_(k-n)—(X)-(-L)_(n)

wherein k is 2, 3 or 5, and n is 1, 2, 3, 4 or 5 such that k-n is notless than zero; X is O, S, S═O, SO2, Se, Se═O, N, N═O, P, P═O, As, orAs═O; each of Y and L, independently, is aryl, heteroaryl, or a straightor branched C2-12 hydrocarbon chain optionally containing at least onedouble bond, at least one triple bond, or at least one double bond andone triple bond. The hydrocarbon chain can be optionally substitutedwith one or more C1-4 alkyl, C2-4 alkenyl, C2-4 alkynyl, C1-4 alkoxy,hydroxyl, halo, amino, nitro, cyano, C3-5 cycloalkyl, 3-5 memberedheterocycloalkyl, aryl, heteroaryl, C1-4 alkylcarbonyloxy, C1-4alkyloxycarbonyl, C1-4 alkylcarbonyl, or formyl. The hydrocarbon chaincan also be optionally interrupted by —O—, —S—, —N(Ra)-, —N(Ra)-C(O)—O—,—O—C(O)—N(Ra)-, —N(Ra)-C(O)—N(Rb)-, —O—C(O)—O—, —P(Ra)-, or —P(O)(Ra)-.Each of Ra and Rb, independently, is hydrogen, alkyl, alkenyl, alkynyl,alkoxy, hydroxylalkyl, hydroxyl, or haloalkyl. An aryl group is asubstituted or unsubstituted cyclic aromatic group. Examples includephenyl, benzyl, naphthyl, tolyl, anthracyl, nitrophenyl, or halophenyl.A heteroaryl group is an aryl group with one or more heteroatoms in thering, for instance furyl, pyiridyl, pyrrolyl, phenanthryl.

Examples of additional ligands include alkyl phosphines, alkyl phosphineoxides, alkyl phosphonic acids, or alkyl phosphinic acids, pyridines,furans, and amines. More specific examples include, but are not limitedto, pyridine, tri-n-octyl phosphine (TOP), tri-n-octyl phosphine oxide(TOPO) and tris-hydroxylpropylphosphine (tHPP). Technical grade TOPO canbe used.

A suitable coordinating ligand can be purchased commercially or preparedby ordinary synthetic organic techniques, for example, as described inJ. March, Advanced Organic Chemistry, which is incorporated herein byreference in its entirety.

See also U.S. patent application Ser. No. 10/641,292 entitled“Stabilized Semiconductor Nanocrystals”, filed 15 Aug. 2003, which ishereby incorporated herein by reference in its entirety.

When a quantum confined semiconductor nanoparticle (including, but notlimited to, a semiconductor nanocrystal) achieves an excited state (orin other words, an exciton is located on the nanocrystal), emission canoccur at an emission wavelength. The emission has a frequency thatcorresponds to the band gap of the quantum confined semiconductormaterial. The band gap is a function of the size of the nanoparticle.Quantum confined semiconductor nanoparticle s having small diameters canhave properties intermediate between molecular and bulk forms of matter.For example, quantum confined semiconductor nanoparticles having smalldiameters can exhibit quantum confinement of both the electron and holein all three dimensions, which leads to an increase in the effectiveband gap of the material with decreasing crystallite size. Consequently,for example, both the optical absorption and emission of semiconductornanocrystals shift to the blue, or to higher energies, as the size ofthe crystallites decreases.

The emission from a quantum confined semiconductor nanoparticle can be anarrow Gaussian emission band that can be tuned through the completewavelength range of the ultraviolet, visible, or infra-red regions ofthe spectrum by varying the size of the quantum confined semiconductornanoparticle, the composition of the quantum confined semiconductornanoparticle, or both. For example, CdSe can be tuned in the visibleregion and InAs can be tuned in the infra-red region. The narrow sizedistribution of a population of quantum confined semiconductornanoparticles can result in emission of light in a narrow spectralrange. The population can be monodisperse preferably exhibits less thana 15% rms (root-mean-square) deviation in diameter of the quantumconfined semiconductor nanoparticle s, more preferably less than 10%,most preferably less than 5%. Spectral emissions in a narrow range of nogreater than about 75 nm, preferably 60 nm, more preferably 40 nm, andmost preferably 30 nm full width at half max (FWHM) for quantum confinedsemiconductor nanoparticle s that emit in the visible can be observed.IR-emitting quantum confined semiconductor nanoparticle s can have aFWHM of no greater than 150 nm, or no greater than 100 nm. Expressed interms of the energy of the emission, the emission can have a FWHM of nogreater than 0.05 eV, or no greater than 0.03 eV. The breadth of theemission decreases as the dispersity of quantum confined semiconductornanoparticle diameters decreases. A narrow FWHM of semiconductornanocrystals can result in saturated color emission. A monodispersepopulation of semiconductor nanocrystals will emit light spanning anarrow range of wavelengths.

For example, semiconductor nanocrystals can have high emission quantumefficiencies such as greater than 10%, 20%, 30%, 40%, 50%, 60%, 70%,80%, or 90%.

Transmission electron microscopy (TEM) can provide information about thesize, shape, and distribution of the semiconductor nanocrystalpopulation. Powder X-ray diffraction (XRD) patterns can provide the mostcomplete information regarding the type and quality of the crystalstructure of the semiconductor nanocrystals. Estimates of size are alsopossible since particle diameter is inversely related, via the X-raycoherence length, to the peak width. For example, the diameter of thesemiconductor nanocrystal can be measured directly by transmissionelectron microscopy or estimated from X-ray diffraction data using, forexample, the Scherrer equation. It also can be estimated from the UV/Visabsorption spectrum.

Quantum confined semiconductor nanoparticles are typically handled in acontrolled (oxygen-free and moisture-free) environment, preventing thequenching of luminescent efficiency during the fabrication process.

An optical material comprising quantum confined semiconductornanoparticles can be dispersed in a liquid medium and are thereforecompatible with thin-film deposition techniques such as spin-casting,drop-casting, and dip coating.

An ink including an optical material can be deposited onto a surface ofa substrate by printing, screen-printing, spin-coating, gravuretechniques, inkjet printing, roll printing, etc.

An ink can be deposited in a predetermined arrangement. For example, theink can be deposited in a patterned or unpatterned arrangement. Foradditional information that may be useful to deposit an ink onto asubstrate, see for example, International Patent Application No.PCT/US2007/014711, entitled “Methods For Depositing Nanomaterial,Methods For Fabricating A Device, And Methods For Fabricating An ArrayOf Devices”, of Seth A. Coe-Sullivan, filed 25 Jun. 2007, the foregoingpatent application being hereby incorporated herein by reference. Apattern that includes more than one size of semiconductor nanocrystalcan emit light in more than one narrow range of wavelengths. The colorof emitted light perceived by a viewer can be controlled by selectingappropriate combinations of semiconductor nanocrystal sizes andmaterials. The degeneracy of the band edge energy levels ofsemiconductor nanocrystals facilitates capture and radiativerecombination of all possible excitons.

Due to the positioning of the optical material comprising quantumconfined semiconductor nanoparticles in features or layers resultingfrom these deposition techniques, not all of the surfaces of thenanoparticles may be available to absorb and emit light.

In certain embodiments, an optical material comprising quantum confinedsemiconductor nanoparticles can be deposited on a surface using contactprinting. See, for example, A. Kumar and G. Whitesides, Applied PhysicsLetters, 63, 2002-2004, (1993); and V. Santhanam and R. P. Andres, NanoLetters, 4, 41-44, (2004), each of which is incorporated by reference inits entirety. See also U.S. patent application Ser. No. 11/253,612,filed 21 Oct. 2005, entitled “Method And System For Transferring APatterned Material”, of Coe-Sullivan et al. and U.S. patent applicationSer. No. 11/253,595, filed 21 Oct. 2005, entitled “Light Emitting DeviceIncluding Semiconductor Nanocrystals,” of Coe-Sullivan, each of which isincorporated herein by reference in its entirety.

Such technique can be use for depositing a various thicknesses ofoptical materials comprising quantum confined semiconductornanoparticles. The thickness can be selected to achieve the desired %absorption thereby. Preferably, the quantum confined semiconductornanoparticles do not absorb any, or absorb only negligible amounts of,the re-emitted photons.

For certain applications, methods for applying a material (e.g., anoptical material) to a predefined region on a substrate may bedesirable. The predefined region is a region on the substrate where thematerial is selectively applied.

An optical material and/or an optical component can be designed toinclude two or more different types of quantum confined semiconductornanoparticles. Different types of quantum confined semiconductornanoparticle can optionally be included in two or more different opticalmaterials. In such case, each of the different optical materials can beapplied to different regions of a substrate or other area on which thenanoparticles are to be used. In such case, each of the differentoptical materials can be applied as separate layers. Such separatelayers can be stacked on top of each other. The material and substratecan be chosen such that the material remains substantially entirelywithin the predetermined area. By selecting a predefined region thatforms a pattern, material can be applied to the substrate such that thematerial forms a pattern. The pattern can be a regular pattern (such asan array, or a series of lines), or an irregular pattern. Once a patternof material is formed on the substrate, the substrate can have a regionincluding the material (the predefined region) and a regionsubstantially free of material. In some circumstances, the materialforms a monolayer on the substrate. The predefined region can be adiscontinuous region. In other words, when the material is applied tothe predefined region of the substrate, locations including the materialcan be separated by other locations that are substantially free of thematerial.

An optical material comprising quantum confined semiconductornanoparticles can alternatively be deposited by solution basedprocessing techniques, phase-separation, spin casting, ink-jet printing,silk-screening, and other liquid film techniques available for formingpatterns on a surface.

Alternatively, quantum confined semiconductor nanoparticles can bedispersed in a light-transmissive host material (e.g., a polymer, aresin, a silica glass, or a silica gel, etc., which is preferably atleast partially light-transmissive, and more preferably transparent, tothe light emitted by the quantum confined semiconductor nanoparticlesand in which quantum confined semiconductor nanoparticles can bedispersed) that is deposited as a full or partial layer or in apatterned arrangement by any of the above-listed or other knowntechniques. Suitable materials include many inexpensive and commonlyavailable materials, such as polystyrene, epoxy, polyimides, and silicaglass. After application to the surface, such material may contain adispersion of quantum confined semiconductor nanoparticles where thenanoparticles have been size selected so as to produce light of a givencolor. Other configurations of quantum confined semiconductornanoparticles disposed in a material, such as, for example, atwo-dimensional layer on a substrate with a polymer overcoating are alsocontemplated.

U.S. patent application Ser. No. 12/283,609 of Seth Coe-Sullivan et al.for “Compositions, Optical Component, System Including An OpticalComponents, Devices, And Other Products”, filed 12 Sep. 2008 is herebyincorporated herein by reference in its entirety.

Optical materials and optical components described herein may beincorporated into a wide variety of consumer products, including flatpanel displays, computer monitors, televisions, billboards, lights forinterior or exterior illumination and/or signaling, heads up displays,fully transparent displays, flexible displays, laser printers,telephones, cell phones, personal digital assistants (PDAs), laptopcomputers, digital cameras, camcorders, viewfinders, micro-displays,vehicles, a large area wall, theater or stadium screen, a sign, lampsand various solid state lighting devices

Other materials, techniques, methods, applications, and information thatmay be useful with the present invention are described in: U.S.Application No. 61/162,293, filed 21 Mar. 2009, U.S. Application No.61/173,375 filed 28 Apr. 2009, U.S. Application No. 61/175,430 filed 4May 2009, U.S. Patent Application No. 61/175,456, filed 4 May 2009, U.S.Patent Application No. 61/234,179, filed 14 Aug. 2009, InternationalPatent Application No. PCT/US2009/002789, filed 6 May 2009; and U.S.patent application Ser. No. 12/283,609, filed 12 Sep. 2008, U.S. patentapplication Ser. No. 12/283,609 of Seth Coe-Sullivan et al. for“Compositions, Optical Component, System Including An OpticalComponents, Devices, And Other Products”, filed 12 Sep. 2008,International Application No. PCT/US2009/002796 of Seth Coe-Sullivan etal. for “Optical Components, Systems Including an Optical Component, AndDevices”, filed 6 May 2009, and U.S. Patent Application No. 61/252,656of Breen for “Method For Preparing Quantum Dots”, filed 17 Oct. 2009,U.S. Application No. 60/946,090 of Linton, et al., for “Methods ForDepositing Nanomaterial, Methods For Fabricating A Device, Methods ForFabricating An Array Of Devices And Compositions”, filed 25 Jun. 2007,and U.S. Application No. 60/949,306 of Linton, et al., for“Compositions, Methods For Depositing Nanomaterial, Methods ForFabricating A Device, And Methods For Fabricating An Array Of Devices”,filed 12 Jul. 2007. Each of the foregoing is hereby incorporated byreference herein in its entirety.

As used herein, “top”, “bottom”, “over”, and “under” are relativepositional terms, based upon a location from a reference point. Moreparticularly, “top” means farthest away from a reference point, while“bottom” means closest to the reference point. Where, e.g., a layer isdescribed as disposed or deposited “over” a component or substrate, thelayer is disposed farther away from the component or substrate. Theremay be other layers between the layer and component or substrate. Asused herein, “cover” is also a relative position term, based upon alocation from a reference point. For example, where a first material isdescribed as covering a second material, the first material is disposedover, but not necessarily in contact with the second material.

As used herein, the singular forms “a”, “an” and “the” include pluralunless the context clearly dictates otherwise. Thus, for example,reference to an emissive material includes reference to one or more ofsuch materials.

Applicants specifically incorporate the entire contents of all citedreferences in this disclosure. Further, when an amount, concentration,or other value or parameter is given as either a range, preferred range,or a list of upper preferable values and lower preferable values, thisis to be understood as specifically disclosing all ranges formed fromany pair of any upper range limit or preferred value and any lower rangelimit or preferred value, regardless of whether ranges are separatelydisclosed. Where a range of numerical values is recited herein, unlessotherwise stated, the range is intended to include the endpointsthereof, and all integers and fractions within the range. It is notintended that the scope of the invention be limited to the specificvalues recited when defining a range.

Other embodiments of the present invention will be apparent to thoseskilled in the art from consideration of the present specification andpractice of the present invention disclosed herein. It is intended thatthe present specification and examples be considered as exemplary onlywith a true scope and spirit of the invention being indicated by thefollowing claims and equivalents thereof.

As used herein, “top”, “bottom”, “over”, and “under” are relativepositional terms, based upon a location from a reference point. Moreparticularly, “top” means farthest away from a reference point, while“bottom” means closest to the reference point. Where, e.g., a layer isdescribed as disposed or deposited “over” a component or substrate, thelayer is disposed farther away from the component or substrate. Theremay be other layers between the layer and component or substrate. Asused herein, “cover” is also a relative position term, based upon alocation from a reference point. For example, where a first material isdescribed as covering a second material, the first material is disposedover, but not necessarily in contact with the second material.

As used herein, the singular forms “a”, “an” and “the” include pluralunless the context clearly dictates otherwise. Thus, for example,reference to an emissive material includes reference to one or more ofsuch materials.

Applicants specifically incorporate the entire contents of all citedreferences in this disclosure. Further, when an amount, concentration,or other value or parameter is given as either a range, preferred range,or a list of upper preferable values and lower preferable values, thisis to be understood as specifically disclosing all ranges formed fromany pair of any upper range limit or preferred value and any lower rangelimit or preferred value, regardless of whether ranges are separatelydisclosed. Where a range of numerical values is recited herein, unlessotherwise stated, the range is intended to include the endpointsthereof, and all integers and fractions within the range. It is notintended that the scope of the invention be limited to the specificvalues recited when defining a range.

Other embodiments of the present invention will be apparent to thoseskilled in the art from consideration of the present specification andpractice of the present invention disclosed herein. It is intended thatthe present specification and examples be considered as exemplary onlywith a true scope and spirit of the invention being indicated by thefollowing claims and equivalents thereof.

1-170. (canceled)
 171. A method for treating an optical materialcomprising quantum confined semiconductor nanoparticles, the methodcomprising exposing at least partially encapsulated optical material toa light flux for a period of time sufficient to increase the solid statephotoluminescent quantum efficiency of the optical material by at least10% of its pre-exposure solid state photoluminescent quantum efficiencyvalue.
 172. A method in accordance with claim 171 wherein the at leastpartially encapsulated is exposed to light flux for a period of timesufficient to increase solid state photoluminescent efficiency of theoptical material by at least 30% of its pre-exposure solid statephotoluminescent quantum efficiency value.
 173. A method in accordancewith claim 171 wherein the at least partially encapsulated opticalmaterial is exposed to light flux for a period of time sufficient toincrease solid state photoluminescent efficiency of the optical materialby at least 40% of its pre-exposure solid state photoluminescent quantumefficiency value.
 174. (canceled)
 175. A method for treating an opticalmaterial comprising quantum confined semiconductor nanoparticles, themethod comprising exposing at least partially encapsulated opticalmaterial to a light flux for a period of time sufficient to achieve asolid state photoluminescent efficiency of the optical material greaterthan or equal to about 80%.
 176. (canceled)
 177. A method in accordancewith claim 175 wherein the at least partially encapsulated opticalmaterial is exposed to light flux for a period of time sufficient toachieve a solid state photoluminescent efficiency of the opticalmaterial greater than or equal to about 90%.
 178. A method in accordancewith claim 171 wherein the optical material is fully encapsulated. 179.A method in accordance with claim 171 wherein the optical material isheated at least a portion of the time the optical material is exposed tolight flux.
 180. A method in accordance with claim 179 wherein theoptical material is heated during the total time while the opticalmaterial is exposed to light flux.
 181. A method in accordance with 171wherein the light flux comprises a peak wavelength in a range from about365 nm to about 480 nm.
 182. A method in accordance with claim 171wherein the light flux is from about 10 to about 100 mW/cm².
 183. Amethod in accordance with claim 171 wherein exposing the opticalmaterial to heat comprises exposing the optical material to atemperature in a range from about 25° to about 80° C. 184-220.(canceled)
 221. A method in accordance with claim 171 wherein the atleast partially encapsulated optical material is exposed to the lightflux for a period of time until the solid state photoluminescentefficiency increases to a substantially constant value.
 222. A method inaccordance with claim 171 wherein the optical material further includesa host material in which the nanoparticles are dispersed.
 223. A methodin accordance with claim 175 wherein the optical material is fullyencapsulated.
 224. A method in accordance with claim 175 wherein theoptical material is heated at least a portion of the time the opticalmaterial is exposed to light flux.
 225. A method in accordance withclaim 224 wherein the optical material is heated during the total timewhile the optical material is exposed to light flux.
 226. A method inaccordance with 175 wherein the light flux comprises a peak wavelengthin a range from about 365 nm to about 480 nm.
 227. A method inaccordance with claim 175 wherein the light flux is from about 10 toabout 100 mW/cm².
 228. A method in accordance with claim 175 whereinexposing the optical material to heat comprises exposing the opticalmaterial to a temperature in a range from about 25° to about 80° C. 229.A method in accordance with claim 175 wherein the optical materialfurther includes a host material in which the nanoparticles aredispersed.